Surfactant-induced chemical ordering of GaAsN:Bi

Extended band anti-crossing model for dilute bismides

(2018) J. Hader et al.   APPLIED PHYSICS LETTERS

Surfactant-assisted growth and properties of rare-earth arsenide InGaAs nanocomposites for terahertz generation

(2016) R. Salas et al.   APPLIED PHYSICS LETTERS

Influence of surface reconstruction on dopant incorporation and transport properties of GaAs(Bi) alloys

(2016) R. L. Field et al.   APPLIED PHYSICS LETTERS

Physical properties and optimization of GaBiAs/(Al)GaAs based near-infrared laser diodes grown by MOVPE with up to 4.4% Bi

(2014) I P Marko et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Bismuth incorporation and the role of ordering in GaAsBi/GaAs structures

(2014) Daniel F Reyes et al.   Nanoscale Research Letters

Bismide-nitride alloys: Promising for efficient light emitting devices in the near- and mid-infrared

(2013) S. J. Sweeney et al.   JOURNAL OF APPLIED PHYSICS

Influence of N interstitials on the electronic properties of GaAsN alloys

(2009) Y. Jin et al.   APPLIED PHYSICS LETTERS

On the origin of logarithmic-normal distributions: An analytical derivation, and its application to nucleation and growth processes

(2008) Ralf B. Bergmann et al.   JOURNAL OF CRYSTAL GROWTH