What Will Come After V-NAND-Vertical Resistive Switching Memory?

Balancing the Source and Sink of Oxygen Vacancies for the Resistive Switching Memory

(2018) Tae Hyung Park et al.   ACS Applied Materials & Interfaces

Nonvolatile Memory Materials for Neuromorphic Intelligent Machines

(2018) Doo Seok Jeong et al.   ADVANCED MATERIALS

A 512-Gb 3-b/Cell 64-Stacked WL 3-D-NAND Flash Memory

(2018) Chulbum Kim et al.   IEEE JOURNAL OF SOLID-STATE CIRCUITS

In2Ga2ZnO7 oxide semiconductor based charge trap device for NAND flash memory

(2018) Eun Suk Hwang et al.   NANOTECHNOLOGY

Equivalent-accuracy accelerated neural-network training using analogue memory

(2018) Stefano Ambrogio et al.   NATURE

A semi-floating gate memory based on van der Waals heterostructures for quasi-non-volatile applications

(2018) Chunsen Liu et al.   Nature Nanotechnology

Electric Field Induced Nitride Trapped Charge Lateral Migration in a SONOS Flash Memory

(2017) Yu-Heng Liu et al.   IEEE ELECTRON DEVICE LETTERS

256 Gb 3 b/Cell V-nand Flash Memory With 48 Stacked WL Layers

(2017) Dongku Kang et al.   IEEE JOURNAL OF SOLID-STATE CIRCUITS

Extension of Two-Port Sneak Current Cancellation Scheme to 3-D Vertical RRAM Crossbar Array

(2017) Woorham Bae et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Four-Bits-Per-Cell Operation in an HfO2 -Based Resistive Switching Device

(2017) Gun Hwan Kim et al.   Small

Double-Layer-Stacked One Diode-One Resistive Switching Memory Crossbar Array with an Extremely High Rectification Ratio of 109

(2017) Kyung Jean Yoon et al.   Advanced Electronic Materials

Analytical Modeling of Current Overshoot in Oxide-Based Resistive Switching Memory (RRAM)

(2016) Stefano Ambrogio et al.   IEEE ELECTRON DEVICE LETTERS

A 128 Gb 3b/cell V-NAND Flash Memory With 1 Gb/s I/O Rate

(2016)   IEEE JOURNAL OF SOLID-STATE CIRCUITS

Low-Power, Self-Rectifying, and Forming-Free Memristor with an Asymmetric Programing Voltage for a High-Density Crossbar Application

(2016) Kyung Min Kim et al.   NANO LETTERS

Comprehensive Writing Margin Analysis and its Application to Stacked one Diode-One Memory Device for High-Density Crossbar Resistance Switching Random Access Memory

(2016) Kyung Jean Yoon et al.   Advanced Electronic Materials

Memristors for Energy-Efficient New Computing Paradigms

(2016) Doo Seok Jeong et al.   Advanced Electronic Materials

Direct Evidence of the Overshoot Suppression in Ta2O5-Based Resistive Switching Memory With an Integrated Access Resistor

(2015) Yang-Shun Fan et al.   IEEE ELECTRON DEVICE LETTERS

Three-Dimensional 128 Gb MLC Vertical nand Flash Memory With 24-WL Stacked Layers and 50 MB/s High-Speed Programming

(2015) Ki-Tae Park et al.   IEEE JOURNAL OF SOLID-STATE CIRCUITS

Electronic resistance switching in the Al/TiOx/Al structure for forming-free and area-scalable memory

(2015) Xing Long Shao et al.   Nanoscale

Prospective of Semiconductor Memory Devices: from Memory System to Materials

(2015) Cheol Seong Hwang   Advanced Electronic Materials

Highly Uniform, Electroforming-Free, and Self-Rectifying Resistive Memory in the Pt/Ta2O5/HfO2-x/TiN Structure

(2014) Jung Ho Yoon et al.   ADVANCED FUNCTIONAL MATERIALS

A Review of Three-Dimensional Resistive Switching Cross-Bar Array Memories from the Integration and Materials Property Points of View

(2014) Jun Yeong Seok et al.   ADVANCED FUNCTIONAL MATERIALS

Predictive Modeling of Channel Potential in 3-D NAND Flash Memory

(2014) Yoon Kim et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A Novel Programming Technique to Boost Low-Resistance State Performance in Ge-Rich GST Phase Change Memory

(2014) Athanasios Kiouseloglou et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Assessment methodology of the lateral migration component in data retention of 3D SONOS memories

(2014) Lifang Liu et al.   MICROELECTRONICS RELIABILITY

Phase change materials and phase change memory

(2014) Simone Raoux et al.   MRS BULLETIN

Homogeneous barrier modulation of TaOx/TiO2 bilayers for ultra-high endurance three-dimensional storage-class memory

(2014) Chung-Wei Hsu et al.   NANOTECHNOLOGY

Study of Multi-level Characteristics for 3D Vertical Resistive Switching Memory

(2014) Yue Bai et al.   Scientific Reports

A 130.7-$\hbox{mm}^{2}$ 2-Layer 32-Gb ReRAM Memory Device in 24-nm Technology

(2013) Tz-yi Liu et al.   IEEE JOURNAL OF SOLID-STATE CIRCUITS

A High Performance and Energy-Efficient Cold Data Eviction Algorithm for 3D-TSV Hybrid ReRAM/MLC NAND SSD

(2013) Chao Sun et al.   IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS

Evolution of the shape of the conducting channel in complementary resistive switching transition metal oxides

(2013) Kyung Jean Yoon et al.   Nanoscale

Real-time identification of the evolution of conducting nano-filaments in TiO2 thin film ReRAM

(2013) Seul Ji Song et al.   Scientific Reports

Transparent and Flexible Graphene Charge-Trap Memory

(2012) Sung Min Kim et al.   ACS Nano

On-Demand Nanodevice with Electrical and Neuromorphic Multifunction Realized by Local Ion Migration

(2012) Rui Yang et al.   ACS Nano

Oxygen migration process in the interfaces during bipolar resistance switching behavior of WO3−x-based nanoionics devices

(2012) Rui Yang et al.   APPLIED PHYSICS LETTERS

Thin-Film ZnO Charge-Trapping Memory Cell Grown in a Single ALD Step

(2012) Feyza B. Oruc et al.   IEEE ELECTRON DEVICE LETTERS

Memristive devices for computing

(2012) J. Joshua Yang et al.   Nature Nanotechnology

Comprehensive investigation of the impact of lateral charge migration on retention performance of planar and 3D SONOS devices

(2012) A. Maconi et al.   SOLID-STATE ELECTRONICS

Resistance and Threshold Switching Voltage Drift Behavior in Phase-Change Memory and Their Temperature Dependence at Microsecond Time Scales Studied Using a Micro-Thermal Stage

(2011) SangBum Kim et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook

(2011) Kyung Min Kim et al.   NANOTECHNOLOGY

A detailed understanding of the electronic bipolar resistance switching behavior in Pt/TiO2/Pt structure

(2011) Kyung Min Kim et al.   NANOTECHNOLOGY

Influence of the Interconnection Line Resistance and Performance of a Resistive Cross Bar Array Memory

(2010) Gun Hwan Kim et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

(2010) Deok-Hwang Kwon et al.   Nature Nanotechnology

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Temperature acceleration of structural relaxation in amorphous Ge2Sb2Te5

(2008) D. Ielmini et al.   APPLIED PHYSICS LETTERS

Modeling of Programming and Read Performance in Phase-Change Memories—Part I: Cell Optimization and Scaling

(2008) Ugo Russo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Etching characteristics and mechanism of Ge2Sb2Te5 thin films in inductively coupled Cl2∕Ar plasma

(2008) Nam-Ki Min et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Reactive-ion etching of Sn-doped Ge2Sb2Te5 in CHF3/O2 plasma for non-volatile phase-change memory device

(2008) Cheng Xu et al.   THIN SOLID FILMS