A Novel Programming Technique to Boost Low-Resistance State Performance in Ge-Rich GST Phase Change Memory

Published 2014 View Full Article

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Title
A Novel Programming Technique to Boost Low-Resistance State Performance in Ge-Rich GST Phase Change Memory
Authors
Keywords
-
Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 61, Issue 5, Pages 1246-1254
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2014-03-22
DOI
10.1109/ted.2014.2310497

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