Reactive-ion etching of Sn-doped Ge2Sb2Te5 in CHF3/O2 plasma for non-volatile phase-change memory device

Published 2008 View Full Article

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Title
Reactive-ion etching of Sn-doped Ge2Sb2Te5 in CHF3/O2 plasma for non-volatile phase-change memory device
Authors
Keywords
-
Journal
THIN SOLID FILMS
Volume 516, Issue 21, Pages 7871-7874
Publisher
Elsevier BV
Online
2008-06-01
DOI
10.1016/j.tsf.2008.05.039

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