Double-Layer-Stacked One Diode-One Resistive Switching Memory Crossbar Array with an Extremely High Rectification Ratio of 109

Self-compliance Pt/HfO2/Ti/Si one-diode–one-resistor resistive random access memory device and its low temperature characteristics

(2016) Chao Lu et al.   Applied Physics Express

Low-Power, Self-Rectifying, and Forming-Free Memristor with an Asymmetric Programing Voltage for a High-Density Crossbar Application

(2016) Kyung Min Kim et al.   NANO LETTERS

A crossbar resistance switching memory readout scheme with sneak current cancellation based on a two-port current-mode sensing

(2016) Woorham Bae et al.   NANOTECHNOLOGY

Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing

(2016) Zhongrui Wang et al.   NATURE MATERIALS

Unipolar resistive switching with forming-free and self-rectifying effects in Cu/HfO2/n-Si devices

(2016) M. J. Wang et al.   AIP Advances

Comprehensive Writing Margin Analysis and its Application to Stacked one Diode-One Memory Device for High-Density Crossbar Resistance Switching Random Access Memory

(2016) Kyung Jean Yoon et al.   Advanced Electronic Materials

Voltage divider effect for the improvement of variability and endurance of TaOx memristor

(2016) Kyung Min Kim et al.   Scientific Reports

Trilayer Tunnel Selectors for Memristor Memory Cells

(2015) Byung Joon Choi et al.   ADVANCED MATERIALS

Pt/Ta2O5/HfO2−x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash

(2015) Jung Ho Yoon et al.   ADVANCED MATERIALS

Prospective of Semiconductor Memory Devices: from Memory System to Materials

(2015) Cheol Seong Hwang   Advanced Electronic Materials

A Review of Three-Dimensional Resistive Switching Cross-Bar Array Memories from the Integration and Materials Property Points of View

(2014) Jun Yeong Seok et al.   ADVANCED FUNCTIONAL MATERIALS

Table of contents

(2014)   IEEE JOURNAL OF SOLID-STATE CIRCUITS

Homogeneous barrier modulation of TaOx/TiO2 bilayers for ultra-high endurance three-dimensional storage-class memory

(2014) Chung-Wei Hsu et al.   NANOTECHNOLOGY

Prepare dispersed CIS nano-scale particles and spray coating CIS absorber layers using nano-scale precursors

(2014) Jian-Chiun Liou et al.   Nanoscale Research Letters

High-Performance and Low-Power Rewritable SiOx1 kbit One Diode-One Resistor Crossbar Memory Array

(2013) Gunuk Wang et al.   ADVANCED MATERIALS

Bipolar one diode–one resistor integration for high-density resistive memory applications

(2013) Yingtao Li et al.   Nanoscale

Optimization of Chemical Structure of Schottky-Type Selection Diode for Crossbar Resistive Memory

(2012) Gun Hwan Kim et al.   ACS Applied Materials & Interfaces

High Current Density and Nonlinearity Combination of Selection Device Based on TaOx/TiO2/TaOx Structure for One Selector–One Resistor Arrays

(2012) Wootae Lee et al.   ACS Nano

32 × 32 Crossbar Array Resistive Memory Composed of a Stacked Schottky Diode and Unipolar Resistive Memory

(2012) Gun Hwan Kim et al.   ADVANCED FUNCTIONAL MATERIALS

Realization of One-Diode–Type Resistive-Switching Memory with Cr–SrTiO$_{3}$ Film

(2012) Min Yeong Song et al.   Applied Physics Express

Schottky diode with excellent performance for large integration density of crossbar resistive memory

(2012) Gun Hwan Kim et al.   APPLIED PHYSICS LETTERS

Self-Selection Unipolar $\hbox{HfO}_{x}$ -Based RRAM

(2012) X. A. Tran et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Avoiding fatal damage to the top electrodes when forming unipolar resistance switching in nano-thick material systems

(2012) S B Lee et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook

(2011) Kyung Min Kim et al.   NANOTECHNOLOGY

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

A theoretical model for Schottky diodes for excluding the sneak current in cross bar array resistive memory

(2010) Gun Hwan Kim et al.   NANOTECHNOLOGY

High-Current-Density CuOx/InZnOxThin-Film Diodes for Cross-Point Memory Applications

(2008) Bo Soo Kang et al.   ADVANCED MATERIALS