Low-Power, Self-Rectifying, and Forming-Free Memristor with an Asymmetric Programing Voltage for a High-Density Crossbar Application

Published 2016 View Full Article

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Title
Low-Power, Self-Rectifying, and Forming-Free Memristor with an Asymmetric Programing Voltage for a High-Density Crossbar Application
Authors
Keywords
-
Journal
NANO LETTERS
Volume 16, Issue 11, Pages 6724-6732
Publisher
American Chemical Society (ACS)
Online
2016-09-23
DOI
10.1021/acs.nanolett.6b01781

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