High Mobility MoS2Transistor with Low Schottky Barrier Contact by Using Atomic Thick h-BN as a Tunneling Layer
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Title
High Mobility MoS2Transistor with Low Schottky Barrier Contact by Using Atomic Thick h-BN as a Tunneling Layer
Authors
Keywords
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Journal
ADVANCED MATERIALS
Volume 28, Issue 37, Pages 8302-8308
Publisher
Wiley
Online
2016-07-08
DOI
10.1002/adma.201602757
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