Dielectric Engineering of a Boron Nitride/Hafnium Oxide Heterostructure for High-Performance 2D Field Effect Transistors

Fluorinated Graphene in Interface Engineering of Ge-Based Nanoelectronics

(2015) Xiaohu Zheng et al.   ADVANCED FUNCTIONAL MATERIALS

Linear Scaling of the Exciton Binding Energy versus the Band Gap of Two-Dimensional Materials

(2015) Jin-Ho Choi et al.   PHYSICAL REVIEW LETTERS

Comparison of mobility extraction methods based on field-effect measurements for graphene

(2015) Hua Zhong et al.   AIP Advances

Interface Engineering for High-Performance Top-Gated MoS2Field-Effect Transistors

(2014) Xuming Zou et al.   ADVANCED MATERIALS

Al2O3/AlN/GaN MOS-Channel-HEMTs With an AlN Interfacial Layer

(2014)   IEEE ELECTRON DEVICE LETTERS

The Effect of Incomplete Ionization on the Turn-Off Behavior of FS IGBTs

(2014) Alice Pei-Shan Hsieh et al.   IEEE ELECTRON DEVICE LETTERS

Electron mobility calculation for graphene on substrates

(2014) Hideki Hirai et al.   JOURNAL OF APPLIED PHYSICS

Boron Nitride Film as a Buffer Layer in Deposition of Dielectrics on Graphene

(2014) Qi Han et al.   Small

HfO2 on MoS2 by Atomic Layer Deposition: Adsorption Mechanisms and Thickness Scalability

(2013) Stephen McDonnell et al.   ACS Nano

Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures

(2013) Gwan-Hyoung Lee et al.   ACS Nano

Fabrication and Characterization of Enhancement-Mode High-$\kappa~{\rm LaLuO}_{3}$-AlGaN/GaN MIS-HEMTs

(2013) Shu Yang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Synthesis and Characterization of Hexagonal Boron Nitride Film as a Dielectric Layer for Graphene Devices

(2012) Ki Kang Kim et al.   ACS Nano

Effective Passivation of AlGaN/GaN HEMTs by ALD-Grown AlN Thin Film

(2012) Sen Huang et al.   IEEE ELECTRON DEVICE LETTERS

Integrated Circuits Based on Bilayer MoS2 Transistors

(2012) Han Wang et al.   NANO LETTERS

High-frequency self-aligned graphene transistors with transferred gate stacks

(2012) R. Cheng et al.   PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA

Integrated Circuits and Logic Operations Based on Single-Layer MoS2

(2011) Branimir Radisavljevic et al.   ACS Nano

Boron nitride substrates for high mobility chemical vapor deposited graphene

(2011) W. Gannett et al.   APPLIED PHYSICS LETTERS

BN/Graphene/BN Transistors for RF Applications

(2011) Han Wang et al.   IEEE ELECTRON DEVICE LETTERS

Top-Gated Chemical Vapor Deposition Grown Graphene Transistors with Current Saturation

(2011) Jingwei Bai et al.   NANO LETTERS

A role for graphene in silicon-based semiconductor devices

(2011) Kinam Kim et al.   NATURE

Single-layer MoS2 transistors

(2011) B. Radisavljevic et al.   Nature Nanotechnology

Dielectric screening in two-dimensional insulators: Implications for excitonic and impurity states in graphane

(2011) Pierluigi Cudazzo et al.   PHYSICAL REVIEW B

Characteristics of high-k Al2O3 dielectric using ozone-based atomic layer deposition for dual-gated graphene devices

(2010) B. Lee et al.   APPLIED PHYSICS LETTERS

Graphene/Substrate Charge Transfer Characterized by Inverse Photoelectron Spectroscopy

(2010) Lingmei Kong et al.   Journal of Physical Chemistry C

High-speed graphene transistors with a self-aligned nanowire gate

(2010) Lei Liao et al.   NATURE

Boron nitride substrates for high-quality graphene electronics

(2010) C. R. Dean et al.   Nature Nanotechnology

Graphene transistors

(2010) Frank Schwierz   Nature Nanotechnology

Effect of high-κgate dielectrics on charge transport in graphene-based field effect transistors

(2010) Aniruddha Konar et al.   PHYSICAL REVIEW B

GaN Power Transistors on Si Substrates for Switching Applications

(2010) Nariaki Ikeda et al.   PROCEEDINGS OF THE IEEE

Detection of Ga suboxides and their impact on III-V passivation and Fermi-level pinning

(2009) C. L. Hinkle et al.   APPLIED PHYSICS LETTERS

Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric

(2009) Seyoung Kim et al.   APPLIED PHYSICS LETTERS

Utilization of a Buffered Dielectric to Achieve High Field-Effect Carrier Mobility in Graphene Transistors

(2009) Damon B. Farmer et al.   NANO LETTERS

Energy Dissipation in Graphene Field-Effect Transistors

(2009) Marcus Freitag et al.   NANO LETTERS

Transfer of Large-Area Graphene Films for High-Performance Transparent Conductive Electrodes

(2009) Xuesong Li et al.   NANO LETTERS

AlGaN/GaN MOS-HEMT With $\hbox{HfO}_{2}$ Dielectric and $\hbox{Al}_{2}\hbox{O}_{3}$ Interfacial Passivation Layer Grown by Atomic Layer Deposition

(2008) Yuanzheng Yue et al.   IEEE ELECTRON DEVICE LETTERS

Current saturation in zero-bandgap, top-gated graphene field-effect transistors

(2008) Inanc Meric et al.   Nature Nanotechnology

Approaching ballistic transport in suspended graphene

(2008) Xu Du et al.   Nature Nanotechnology

Intrinsic and extrinsic performance limits of graphene devices on SiO2

(2008) Jian-Hao Chen et al.   Nature Nanotechnology

Substrate-limited electron dynamics in graphene

(2008) S. Fratini et al.   PHYSICAL REVIEW B

Tuning the Effective Fine Structure Constant in Graphene: Opposing Effects of Dielectric Screening on Short- and Long-Range Potential Scattering

(2008) C. Jang et al.   PHYSICAL REVIEW LETTERS

Temperature-Dependent Transport in Suspended Graphene

(2008) K. I. Bolotin et al.   PHYSICAL REVIEW LETTERS

Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer

(2008) S. V. Morozov et al.   PHYSICAL REVIEW LETTERS

GaN-Based RF Power Devices and Amplifiers

(2008) U.K. Mishra et al.   PROCEEDINGS OF THE IEEE

Electron scattering on microscopic corrugations in graphene

(2007) M.I Katsnelson et al.   PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES