Floating Gate Memory-based Monolayer MoS2Transistor with Metal Nanocrystals Embedded in the Gate Dielectrics
Published 2014 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Floating Gate Memory-based Monolayer MoS2Transistor with Metal Nanocrystals Embedded in the Gate Dielectrics
Authors
Keywords
-
Journal
Small
Volume 11, Issue 2, Pages 208-213
Publisher
Wiley
Online
2014-08-13
DOI
10.1002/smll.201401872
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Multibit Data Storage States Formed in Plasma-Treated MoS2 Transistors
- (2014) Mikai Chen et al. ACS Nano
- Nonvolatile Memory Cells Based on MoS2/Graphene Heterostructures
- (2013) Simone Bertolazzi et al. ACS Nano
- Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures
- (2013) Gwan-Hyoung Lee et al. ACS Nano
- Measurement of mobility in dual-gated MoS2 transistors
- (2013) Michael S. Fuhrer et al. Nature Nanotechnology
- Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices
- (2013) Min Sup Choi et al. Nature Communications
- Hysteresis in Single-Layer MoS2 Field Effect Transistors
- (2012) Dattatray J. Late et al. ACS Nano
- Future Prospects of NAND Flash Memory Technology—The Evolution from Floating Gate to Charge Trapping to 3D Stacking
- (2012) Chih-Yuan Lu JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
- (2012) Qing Hua Wang et al. Nature Nanotechnology
- Memory Devices Using a Mixture of MoS2and Graphene Oxide as the Active Layer
- (2012) Zongyou Yin et al. Small
- MoS2Nanosheets for Top-Gate Nonvolatile Memory Transistor Channel
- (2012) Hee Sung Lee et al. Small
- Integrated Circuits and Logic Operations Based on Single-Layer MoS2
- (2011) Branimir Radisavljevic et al. ACS Nano
- Recent progress in gold nanoparticle-based non-volatile memory devices
- (2011) Jang-Sik Lee GOLD BULLETIN
- Developments in nanocrystal memory
- (2011) Ting-Chang Chang et al. Materials Today
- How Good Can Monolayer MoS2Transistors Be?
- (2011) Youngki Yoon et al. NANO LETTERS
- Single-layer MoS2 transistors
- (2011) B. Radisavljevic et al. Nature Nanotechnology
- Fabrication of Single- and Multilayer MoS2 Film-Based Field-Effect Transistors for Sensing NO at Room Temperature
- (2011) Hai Li et al. Small
- Modeling of Barrier-Engineered Charge-Trapping nand Flash Devices
- (2010) Hang-Ting Lue et al. IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
- High-speed graphene transistors with a self-aligned nanowire gate
- (2010) Lei Liao et al. NATURE
- Graphene transistors
- (2010) Frank Schwierz Nature Nanotechnology
- Atomically ThinMoS2: A New Direct-Gap Semiconductor
- (2010) Kin Fai Mak et al. PHYSICAL REVIEW LETTERS
- A nonvolatile memory capacitor based on Au nanocrystals with HfO2 tunneling and blocking layers
- (2009) V. Mikhelashvili et al. APPLIED PHYSICS LETTERS
- Future challenges of flash memory technologies
- (2008) Chih-Yuan Lu et al. MICROELECTRONIC ENGINEERING
- Origin of flat band voltage shift in HfO2 gate dielectric with La2O3 insertion
- (2008) K. Kakushima et al. SOLID-STATE ELECTRONICS
Publish scientific posters with Peeref
Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.
Learn MoreAdd your recorded webinar
Do you already have a recorded webinar? Grow your audience and get more views by easily listing your recording on Peeref.
Upload Now