High Mobility MoS2Transistor with Low Schottky Barrier Contact by Using Atomic Thick h-BN as a Tunneling Layer

Dielectric Engineering of a Boron Nitride/Hafnium Oxide Heterostructure for High-Performance 2D Field Effect Transistors

(2016) Xuming Zou et al.   ADVANCED MATERIALS

Performance Potential and Limit of MoS2Transistors

(2015) Xuefei Li et al.   ADVANCED MATERIALS

Electrical Contact Analysis of Multilayer MoS2 Transistor With Molybdenum Source/Drain Electrodes

(2015) Geonwook Yoo et al.   IEEE ELECTRON DEVICE LETTERS

Toward Barrier Free Contact to Molybdenum Disulfide Using Graphene Electrodes

(2015) Yuan Liu et al.   NANO LETTERS

Statistical Study on the Schottky Barrier Reduction of Tunneling Contacts to CVD Synthesized MoS2

(2015) Seunghyun Lee et al.   NANO LETTERS

Evidence for Defect-Mediated Tunneling in Hexagonal Boron Nitride-Based Junctions

(2015) U. Chandni et al.   NANO LETTERS

Metal–insulator crossover in multilayered MoS2

(2015) Min Ji Park et al.   Nanoscale

Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform

(2015) Xu Cui et al.   Nature Nanotechnology

Controlling the Schottky barrier atMoS2/metal contacts by inserting a BN monolayer

(2015) Mojtaba Farmanbar et al.   PHYSICAL REVIEW B

Integration of High-kOxide on MoS2by Using Ozone Pretreatment for High-Performance MoS2Top-Gated Transistor with Thickness-Dependent Carrier Scattering Investigation

(2015) Jingli Wang et al.   Small

Electrically Tunable and Negative Schottky Barriers in Multi-layered Graphene/MoS2 Heterostructured Transistors

(2015) Dongri Qiu et al.   Scientific Reports

Thickness Scaling Effect on Interfacial Barrier and Electrical Contact to Two-Dimensional MoS2 Layers

(2014) Song-Lin Li et al.   ACS Nano

Interface Engineering for High-Performance Top-Gated MoS2Field-Effect Transistors

(2014) Xuming Zou et al.   ADVANCED MATERIALS

Schottky barrier heights for Au and Pd contacts to MoS2

(2014) Naveen Kaushik et al.   APPLIED PHYSICS LETTERS

High-performance MoS2 transistors with low-resistance molybdenum contacts

(2014) Jiahao Kang et al.   APPLIED PHYSICS LETTERS

The Unusual Mechanism of Partial Fermi Level Pinning at Metal–MoS2 Interfaces

(2014) Cheng Gong et al.   NANO LETTERS

Chloride Molecular Doping Technique on 2D Materials: WS2 and MoS2

(2014) Lingming Yang et al.   NANO LETTERS

Phase-engineered low-resistance contacts for ultrathin MoS2 transistors

(2014) Rajesh Kappera et al.   NATURE MATERIALS

Floating Gate Memory-based Monolayer MoS2Transistor with Metal Nanocrystals Embedded in the Gate Dielectrics

(2014) Jingli Wang et al.   Small

Towards intrinsic charge transport in monolayer molybdenum disulfide by defect and interface engineering

(2014) Zhihao Yu et al.   Nature Communications

Controllable Schottky Barriers between MoS2 and Permalloy

(2014) Weiyi Wang et al.   Scientific Reports

HfO2 on MoS2 by Atomic Layer Deposition: Adsorption Mechanisms and Thickness Scalability

(2013) Stephen McDonnell et al.   ACS Nano

High-Performance Molybdenum Disulfide Field-Effect Transistors with Spin Tunnel Contacts

(2013) André Dankert et al.   ACS Nano

Thickness-Dependent Interfacial Coulomb Scattering in Atomically Thin Field-Effect Transistors

(2013) Song-Lin Li et al.   NANO LETTERS

Control of Schottky Barriers in Single Layer MoS2 Transistors with Ferromagnetic Contacts

(2013) Jen-Ru Chen et al.   NANO LETTERS

Mobility engineering and a metal–insulator transition in monolayer MoS2

(2013) Branimir Radisavljevic et al.   NATURE MATERIALS

High Performance Multilayer MoS2 Transistors with Scandium Contacts

(2012) Saptarshi Das et al.   NANO LETTERS

Impact of fixed charge on metal-insulator-semiconductor barrier height reduction

(2011) Jenny Hu et al.   APPLIED PHYSICS LETTERS

How Good Can Monolayer MoS2Transistors Be?

(2011) Youngki Yoon et al.   NANO LETTERS

Single-layer MoS2 transistors

(2011) B. Radisavljevic et al.   Nature Nanotechnology

Graphene transistors

(2010) Frank Schwierz   Nature Nanotechnology