Impact of fixed charge on metal-insulator-semiconductor barrier height reduction

Experimental demonstration of In0.53Ga0.47As field effect transistors with scalable nonalloyed source/drain contacts

(2011) Jenny Hu et al.   APPLIED PHYSICS LETTERS

Increase in current density for metal contacts to n-germanium by inserting TiO2 interfacial layer to reduce Schottky barrier height

(2011) J.-Y. Jason Lin et al.   APPLIED PHYSICS LETTERS

Schottky barrier height reduction for metal/n-GaSb contact by inserting TiO2 interfacial layer with low tunneling resistance

(2011) Ze Yuan et al.   APPLIED PHYSICS LETTERS

Metal-induced gap states modeling of metal-Ge contacts with and without a silicon nitride ultrathin interfacial layer

(2011) John F. Wager et al.   JOURNAL OF APPLIED PHYSICS

Shifting Schottky barrier heights with ultra-thin dielectric layers

(2011) L. Lin et al.   MICROELECTRONIC ENGINEERING

Band offsets of Al2O3/InxGa1−xAs (x=0.53 and 0.75) and the effects of postdeposition annealing

(2010) N. V. Nguyen et al.   APPLIED PHYSICS LETTERS

Origin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated InGaAs substrates

(2010) Byungha Shin et al.   APPLIED PHYSICS LETTERS

Metal/III-V Schottky barrier height tuning for the design of nonalloyed III-V field-effect transistor source/drain contacts

(2010) Jenny Hu et al.   JOURNAL OF APPLIED PHYSICS

Near band edge Schottky barrier height modulation using high-κ dielectric dipole tuning mechanism

(2009) B. E. Coss et al.   APPLIED PHYSICS LETTERS

Fermi level depinning in metal/Ge Schottky junction for metal source/drain Ge metal-oxide-semiconductor field-effect-transistor application

(2009) Masaharu Kobayashi et al.   JOURNAL OF APPLIED PHYSICS

A Significant Shift of Schottky Barrier Heights at Strongly Pinned Metal/Germanium Interface by Inserting an Ultra-Thin Insulating Film

(2008) Tomonori Nishimura et al.   Applied Physics Express

Alleviation of Fermi-level pinning effect on metal/germanium interface by insertion of an ultrathin aluminum oxide

(2008) Yi Zhou et al.   APPLIED PHYSICS LETTERS

Ohmic contact formation on n-type Ge

(2008) R. R. Lieten et al.   APPLIED PHYSICS LETTERS

GaAs interfacial self-cleaning by atomic layer deposition

(2008) C. L. Hinkle et al.   APPLIED PHYSICS LETTERS