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Title
Performance Potential and Limit of MoS2Transistors
Authors
Keywords
-
Journal
ADVANCED MATERIALS
Volume 27, Issue 9, Pages 1547-1552
Publisher
Wiley
Online
2015-01-14
DOI
10.1002/adma.201405068
References
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Related references
Note: Only part of the references are listed.- Low-Frequency Noise in Bilayer MoS2 Transistor
- (2014) Xuejun Xie et al. ACS Nano
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- MoS2 Transistors Operating at Gigahertz Frequencies
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- Graphene/MoS2 Hybrid Technology for Large-Scale Two-Dimensional Electronics
- (2014) Lili Yu et al. NANO LETTERS
- Phase-engineered low-resistance contacts for ultrathin MoS2 transistors
- (2014) Rajesh Kappera et al. NATURE MATERIALS
- Role of Joule Heating on Current Saturation and Transient Behavior of Graphene Transistors
- (2013) Sharnali Islam et al. IEEE ELECTRON DEVICE LETTERS
- Low-Frequency Electronic Noise in Single-Layer MoS2 Transistors
- (2013) Vinod K. Sangwan et al. NANO LETTERS
- Low-frequency noise in multilayer MoS2field-effect transistors: the effect of high-k passivation
- (2013) Junhong Na et al. Nanoscale
- Channel Length Scaling of MoS2 MOSFETs
- (2012) Han Liu et al. ACS Nano
- Hysteresis in Single-Layer MoS2 Field Effect Transistors
- (2012) Dattatray J. Late et al. ACS Nano
- Integrated Circuits Based on Bilayer MoS2 Transistors
- (2012) Han Wang et al. NANO LETTERS
- High Performance Multilayer MoS2 Transistors with Scandium Contacts
- (2012) Saptarshi Das et al. NANO LETTERS
- Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
- (2012) Qing Hua Wang et al. Nature Nanotechnology
- Large-Area Vapor-Phase Growth and Characterization of MoS2Atomic Layers on a SiO2Substrate
- (2012) Yongjie Zhan et al. Small
- High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals
- (2012) Sunkook Kim et al. Nature Communications
- Integrated Circuits and Logic Operations Based on Single-Layer MoS2
- (2011) Branimir Radisavljevic et al. ACS Nano
- Channel Length Scaling in Graphene Field-Effect Transistors Studied with Pulsed Current−Voltage Measurements
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- (2011) Jingwei Bai et al. NANO LETTERS
- Single-layer MoS2 transistors
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- Atomically ThinMoS2: A New Direct-Gap Semiconductor
- (2010) Kin Fai Mak et al. PHYSICAL REVIEW LETTERS
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