Enhancement of resistive switching performance by introducing a thin non-stoichiometric CeO2-x switching layer in TiO2-based resistive random access memory

Influence of argon and oxygen pressure ratio on bipolar-resistive switching characteristics of CeO2−x thin films deposited at room temperature

(2018) Muhammad Ismail et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Elimination of endurance degradation by oxygen annealing in bilayer ZnO/CeO 2-x thin films for nonvolatile resistive memory

(2018) Muhammad Ismail et al.   CURRENT APPLIED PHYSICS

Self-Rectifying and Forming-Free Resistive-Switching Device for Embedded Memory Application

(2018) Qing Luo et al.   IEEE ELECTRON DEVICE LETTERS

Improved unipolar resistive switching characteristics of Au-doped nickel ferrite magnetic thin films for nonvolatile memory applications

(2018) Aize Hao et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Enhancement of resistive switching ratio induced by competing interfacial oxygen diffusion in tantalum oxide based memories with metal nitride electrode

(2018) Lei Hu et al.   APPLIED PHYSICS LETTERS

Controlling the thin interfacial buffer layer for improving the reliability of the Ta/Ta2O5/Pt resistive switching memory

(2018) Yichuan Wang et al.   APPLIED PHYSICS LETTERS

3-D Memristor Crossbars for Analog and Neuromorphic Computing Applications

(2017) Gina C. Adam et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Mechanism for an enhanced resistive switching effect of bilayer NiO x /TiO 2 for resistive random access memory

(2017) Guangdong Zhou et al.   JOURNAL OF ALLOYS AND COMPOUNDS

The current limit and self-rectification functionalities in the TiO2/HfO2 resistive switching material system

(2017) Jung Ho Yoon et al.   Nanoscale

Endurance and Cycle-to-cycle Uniformity Improvement in Tri-Layered CeO2/Ti/CeO2 Resistive Switching Devices by Changing Top Electrode Material

(2017) Anwar Manzoor Rana et al.   Scientific Reports

Improved Endurance and Resistive Switching Stability in Ceria Thin Films Due to Charge Transfer Ability of Al Dopant

(2016) M. Ismail et al.   ACS Applied Materials & Interfaces

A high performance transparent resistive switching memory made from ZrO2/AlON bilayer structure

(2016) Tsung-Ling Tsai et al.   APPLIED PHYSICS LETTERS

Resistive switching characteristics in manganese oxide and tantalum oxide devices

(2016) Quanli Hu et al.   MICROELECTRONIC ENGINEERING

Complementary resistive switching behavior induced by varying forming current compliance in resistance random access memory

(2015) Yi-Ting Tseng et al.   APPLIED PHYSICS LETTERS

Coexistence of bipolar and unipolar resistive switching in Al-doped ceria thin films for non-volatile memory applications

(2015) Muhammad Ismail et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Switching mechanism of double forming process phenomenon in ZrOx/HfOy bilayer resistive switching memory structure with large endurance

(2014) Chun-Yang Huang et al.   APPLIED PHYSICS LETTERS

Effect of oxide/oxide interface on polarity dependent resistive switching behavior in ZnO/ZrO2 heterostructures

(2014) Zedong Xu et al.   APPLIED PHYSICS LETTERS

Improvement of resistive switching performances via an amorphous ZrO2 layer formation in TiO2-based forming-free resistive random access memory

(2014) Baiwen Zeng et al.   JOURNAL OF APPLIED PHYSICS

Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

(2014) F. Pan et al.   MATERIALS SCIENCE & ENGINEERING R-REPORTS

Forming-free bipolar resistive switching in nonstoichiometric ceria films

(2014) Muhammad Ismail et al.   Nanoscale Research Letters

Multiple Memory States in Resistive Switching Devices Through Controlled Size and Orientation of the Conductive Filament

(2013) S. Balatti et al.   ADVANCED MATERIALS

Bipolar resistive switching characteristics in CuO/ZnO bilayer structure

(2013) F. Yang et al.   JOURNAL OF APPLIED PHYSICS

Hydrothermal synthesis and room-temperature ferromagnetism of CeO2 nanocolumns

(2013) Fanming Meng et al.   MATERIALS LETTERS

Memristive devices for computing

(2012) J. Joshua Yang et al.   Nature Nanotechnology

Effect of ZrOx/HfOx bilayer structure on switching uniformity and reliability in nonvolatile memory applications

(2010) Joonmyoung Lee et al.   APPLIED PHYSICS LETTERS

Controllable oxygen vacancies to enhance resistive switching performance in a ZrO2-based RRAM with embedded Mo layer

(2010) Sheng-Yu Wang et al.   NANOTECHNOLOGY

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Resistive switching in transition metal oxides

(2008) Akihito Sawa   Materials Today

Ce 3d XPS investigation of cerium oxides and mixed cerium oxide (CexTiyOz)

(2008) Eric Bêche et al.   SURFACE AND INTERFACE ANALYSIS