Improvement of resistive switching performances via an amorphous ZrO2 layer formation in TiO2-based forming-free resistive random access memory
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Title
Improvement of resistive switching performances via an amorphous ZrO2 layer formation in TiO2-based forming-free resistive random access memory
Authors
Keywords
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Journal
JOURNAL OF APPLIED PHYSICS
Volume 116, Issue 12, Pages 124514
Publisher
AIP Publishing
Online
2014-09-30
DOI
10.1063/1.4896402
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Note: Only part of the references are listed.- The enhancement of unipolar resistive switching behavior via an amorphous TiOx layer formation in Dy2O3-based forming-free RRAM
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- Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook
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- (2010) Kuyyadi P Biju et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
- (2010) Deok-Hwang Kwon et al. Nature Nanotechnology
- Improvement of Resistive Switching Properties in $ \hbox{ZrO}_{2}$-Based ReRAM With Implanted Ti Ions
- (2009) Qi Liu et al. IEEE ELECTRON DEVICE LETTERS
- Low-Power and Nanosecond Switching in Robust Hafnium Oxide Resistive Memory With a Thin Ti Cap
- (2009) H.Y. Lee et al. IEEE ELECTRON DEVICE LETTERS
- Highly uniform resistive switching characteristics of TiN/ZrO2/Pt memory devices
- (2009) B. Sun et al. JOURNAL OF APPLIED PHYSICS
- Resistive Switching Memory Devices Composed of Binary Transition Metal Oxides Using Sol−Gel Chemistry
- (2009) Chanwoo Lee et al. LANGMUIR
- Study on Resistance Switching Properties of Na0.5Bi0.5TiO3 Thin Films Using Impedance Spectroscopy
- (2009) Ting Zhang et al. Nanoscale Research Letters
- MATERIALS SCIENCE: Who Wins the Nonvolatile Memory Race?
- (2008) G. I. Meijer SCIENCE
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