Mechanism for an enhanced resistive switching effect of bilayer NiO x /TiO 2 for resistive random access memory

Published 2017 View Full Article

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Title
Mechanism for an enhanced resistive switching effect of bilayer NiO x /TiO 2 for resistive random access memory
Authors
Keywords
Bilay NiOx/TiO, 2, films, Resistive switching memory, Migration of oxygen vacancy, Ag conduction filamens
Journal
JOURNAL OF ALLOYS AND COMPOUNDS
Volume 722, Issue -, Pages 753-759
Publisher
Elsevier BV
Online
2017-06-20
DOI
10.1016/j.jallcom.2017.06.178

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