Influence of argon and oxygen pressure ratio on bipolar-resistive switching characteristics of CeO2−x thin films deposited at room temperature
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Title
Influence of argon and oxygen pressure ratio on bipolar-resistive switching characteristics of CeO2−x thin films deposited at room temperature
Authors
Keywords
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Journal
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
Volume 124, Issue 2, Pages -
Publisher
Springer Nature
Online
2018-01-09
DOI
10.1007/s00339-017-1512-2
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