Enhancement of resistive switching ratio induced by competing interfacial oxygen diffusion in tantalum oxide based memories with metal nitride electrode
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Title
Enhancement of resistive switching ratio induced by competing interfacial oxygen diffusion in tantalum oxide based memories with metal nitride electrode
Authors
Keywords
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Journal
APPLIED PHYSICS LETTERS
Volume 113, Issue 4, Pages 043503
Publisher
AIP Publishing
Online
2018-07-25
DOI
10.1063/1.5037840
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