Elimination of endurance degradation by oxygen annealing in bilayer ZnO/CeO 2-x thin films for nonvolatile resistive memory

Published 2018 View Full Article

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Title
Elimination of endurance degradation by oxygen annealing in bilayer ZnO/CeO 2-x thin films for nonvolatile resistive memory
Authors
Keywords
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Journal
CURRENT APPLIED PHYSICS
Volume 18, Issue 8, Pages 924-932
Publisher
Elsevier BV
Online
2018-05-03
DOI
10.1016/j.cap.2018.05.001

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