Enhancement of resistive switching performance by introducing a thin non-stoichiometric CeO2-x switching layer in TiO2-based resistive random access memory
出版年份 2019 全文链接
标题
Enhancement of resistive switching performance by introducing a thin non-stoichiometric CeO2-x switching layer in TiO2-based resistive random access memory
作者
关键词
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出版物
APPLIED PHYSICS LETTERS
Volume 114, Issue 1, Pages 012101
出版商
AIP Publishing
发表日期
2019-01-05
DOI
10.1063/1.5066586
参考文献
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