Coexistence of bipolar and unipolar resistive switching in Al-doped ceria thin films for non-volatile memory applications

Published 2015 View Full Article

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Title
Coexistence of bipolar and unipolar resistive switching in Al-doped ceria thin films for non-volatile memory applications
Authors
Keywords
Resistive switching, Al-doping, Ceria film, ReRAM devices, Schottky conduction
Journal
JOURNAL OF ALLOYS AND COMPOUNDS
Volume 646, Issue -, Pages 662-668
Publisher
Elsevier BV
Online
2015-06-20
DOI
10.1016/j.jallcom.2015.06.146

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