Silicon quantum electronics

Wave Function Control over a Single Donor Atom

(2013) J. Verduijn et al.   NANO LETTERS

Spin readout and addressability of phosphorus-donor clusters in silicon

(2013) H. Büch et al.   Nature Communications

Ab initio calculation of valley splitting in monolayer δ-doped phosphorus in silicon

(2013) Daniel W Drumm et al.   Nanoscale Research Letters

Nanoscale Distortions of Si Quantum Wells in Si/SiGe Quantum-Electronic Heterostructures

(2012) P. G. Evans et al.   ADVANCED MATERIALS

Charge dynamics of a single donor coupled to a few-electron quantum dot in silicon

(2012) G. Mazzeo et al.   APPLIED PHYSICS LETTERS

Few electron double quantum dot in an isotopically purified 28Si quantum well

(2012) A. Wild et al.   APPLIED PHYSICS LETTERS

Single charge sensing and transport in double quantum dots fabricated from commercially grown Si/SiGe heterostructures

(2012) C. Payette et al.   APPLIED PHYSICS LETTERS

Engineering Independent Electrostatic Control of Atomic-Scale (∼4 nm) Silicon Double Quantum Dots

(2012) Bent Weber et al.   NANO LETTERS

Donor-Based Single Electron Pumps with Tunable Donor Binding Energy

(2012) G. P. Lansbergen et al.   NANO LETTERS

Nanoscale broadband transmission lines for spin qubit control

(2012) J P Dehollain et al.   NANOTECHNOLOGY

Few electron limit of n-type metal oxide semiconductor single electron transistors

(2012) Enrico Prati et al.   NANOTECHNOLOGY

Coherent singlet-triplet oscillations in a silicon-based double quantum dot

(2012) B. M. Maune et al.   NATURE

A single-atom electron spin qubit in silicon

(2012) Jarryd J. Pla et al.   NATURE

Circuit quantum electrodynamics with a spin qubit

(2012) K. D. Petersson et al.   NATURE

Silicon spintronics

(2012) Ron Jansen   NATURE MATERIALS

Anderson–Mott transition in arrays of a few dopant atoms in a silicon transistor

(2012) Enrico Prati et al.   Nature Nanotechnology

A single-atom transistor

(2012) Martin Fuechsle et al.   Nature Nanotechnology

Two-electron dephasing in single Si and GaAs quantum dots

(2012) John King Gamble et al.   PHYSICAL REVIEW B

Coherent electrical rotations of valley states in Si quantum dots using the phase of the valley-orbit coupling

(2012) Yue Wu et al.   PHYSICAL REVIEW B

Effective mass theory of monolayerδdoping in the high-density limit

(2012) Daniel W. Drumm et al.   PHYSICAL REVIEW B

Magnetic field dependence of Pauli spin blockade: A window into the sources of spin relaxation in silicon quantum dots

(2012) G. Yamahata et al.   PHYSICAL REVIEW B

Strong coupling of a spin qubit to a superconducting stripline cavity

(2012) Xuedong Hu et al.   PHYSICAL REVIEW B

Theory of Spin Relaxation in Two-Electron Lateral Coupled Quantum Dots

(2012) Martin Raith et al.   PHYSICAL REVIEW LETTERS

Valley-Based Noise-Resistant Quantum Computation Using Si Quantum Dots

(2012) Dimitrie Culcer et al.   PHYSICAL REVIEW LETTERS

Magnetic-Field Probing of an SU(4) Kondo Resonance in a Single-Atom Transistor

(2012) G. C. Tettamanzi et al.   PHYSICAL REVIEW LETTERS

Detection of a Large Valley-Orbit Splitting in Silicon with Two-Donor Spectroscopy

(2012) B. Roche et al.   PHYSICAL REVIEW LETTERS

Single-Shot Measurement of Triplet-Singlet Relaxation in aSi/SiGeDouble Quantum Dot

(2012) J. R. Prance et al.   PHYSICAL REVIEW LETTERS

Monolithic Growth of Ultrathin Ge Nanowires on Si(001)

(2012) J. J. Zhang et al.   PHYSICAL REVIEW LETTERS

Fast Hybrid Silicon Double-Quantum-Dot Qubit

(2012) Zhan Shi et al.   PHYSICAL REVIEW LETTERS

Dipole Coupling of a Double Quantum Dot to a Microwave Resonator

(2012) T. Frey et al.   PHYSICAL REVIEW LETTERS

Quantum Information Storage for over 180 s Using Donor Spins in a 28Si "Semiconductor Vacuum"

(2012) M. Steger et al.   SCIENCE

Ohm's Law Survives to the Atomic Scale

(2012) B. Weber et al.   SCIENCE

Joule-Assisted Silicidation for Short-Channel Silicon Nanowire Devices

(2011) Massimo Mongillo et al.   ACS Nano

Si/SiGe quantum dot with superconducting single-electron transistor charge sensor

(2011) Mingyun Yuan et al.   APPLIED PHYSICS LETTERS

Pauli spin blockade in undoped Si/SiGe two-electron double quantum dots

(2011) M. G. Borselli et al.   APPLIED PHYSICS LETTERS

Tunable singlet-triplet splitting in a few-electron Si/SiGe quantum dot

(2011) Zhan Shi et al.   APPLIED PHYSICS LETTERS

Adiabatic charge control in a single donor atom transistor

(2011) Enrico Prati et al.   APPLIED PHYSICS LETTERS

Measurement of valley splitting in high-symmetry Si/SiGe quantum dots

(2011) M. G. Borselli et al.   APPLIED PHYSICS LETTERS

NEMO5: A Parallel Multiscale Nanoelectronics Modeling Tool

(2011) Sebastian Steiger et al.   IEEE TRANSACTIONS ON NANOTECHNOLOGY

Singlet-triplet relaxation in SiGe/Si/SiGe double quantum dots

(2011) L. Wang et al.   JOURNAL OF APPLIED PHYSICS

D−shallow donor near a semiconductor–metal and a semiconductor–dielectric interface

(2011) Y L Hao et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Room-Temperature Charge Stability Modulated by Quantum Effects in a Nanoscale Silicon Island

(2011) S. J. Shin et al.   NANO LETTERS

Charge Sensing of Precisely Positioned P Donors in Si

(2011) Suddhasatta Mahapatra et al.   NANO LETTERS

Phosphorus δ-doped silicon: mixed-atom pseudopotentials and dopant disorder effects

(2011) Damien J Carter et al.   NANOTECHNOLOGY

Stark tuning of the charge states of a two-donor molecule in silicon

(2011) Rajib Rahman et al.   NANOTECHNOLOGY

Spin filling of valley–orbit states in a silicon quantum dot

(2011) W H Lim et al.   NANOTECHNOLOGY

Embracing the quantum limit in silicon computing

(2011) John J. L. Morton et al.   NATURE

Atomic physics and quantum optics using superconducting circuits

(2011) J. Q. You et al.   NATURE

Electron spin coherence exceeding seconds in high-purity silicon

(2011) Alexei M. Tyryshkin et al.   NATURE MATERIALS

Hole spin relaxation in Ge–Si core–shell nanowire qubits

(2011) Yongjie Hu et al.   Nature Nanotechnology

Electronic structure of realistically extended atomistically resolved disordered Si:Pδ-doped layers

(2011) Sunhee Lee et al.   PHYSICAL REVIEW B

Leakage-current line shapes from inelastic cotunneling in the Pauli spin blockade regime

(2011) W. A. Coish et al.   PHYSICAL REVIEW B

Hyperfine interactions in silicon quantum dots

(2011) Lucy V. C. Assali et al.   PHYSICAL REVIEW B

Fano resonance in electron transport through single dopant atoms

(2011) L. E. Calvet et al.   PHYSICAL REVIEW B

High-resolution electrical detection of free induction decay and Hahn echoes in phosphorus-doped silicon

(2011) Jinming Lu et al.   PHYSICAL REVIEW B

Intervalley coupling for interface-bound electrons in silicon: An effective mass study

(2011) A. L. Saraiva et al.   PHYSICAL REVIEW B

Single-dopant resonance in a single-electron transistor

(2011) V. N. Golovach et al.   PHYSICAL REVIEW B

Electric field reduced charging energies and two-electron bound excited states of single donors in silicon

(2011) R. Rahman et al.   PHYSICAL REVIEW B

Theory of single electron spin relaxation in Si/SiGe lateral coupled quantum dots

(2011) Martin Raith et al.   PHYSICAL REVIEW B

Engineered valley-orbit splittings in quantum-confined nanostructures in silicon

(2011) R. Rahman et al.   PHYSICAL REVIEW B

Strong spin-orbit interaction and helical hole states in Ge/Si nanowires

(2011) Christoph Kloeffel et al.   PHYSICAL REVIEW B

Hubbard model description of silicon spin qubits: Charge stability diagram and tunnel coupling in Si double quantum dots

(2011) S. Das Sarma et al.   PHYSICAL REVIEW B

Single-shot measurement and tunnel-rate spectroscopy of a Si/SiGe few-electron quantum dot

(2011) Madhu Thalakulam et al.   PHYSICAL REVIEW B

Unconventional Transport in the “Hole” Regime of a Si Double Quantum Dot

(2011) Teck Seng Koh et al.   PHYSICAL REVIEW LETTERS

Lifetime-Enhanced Transport in Silicon due to Spin and Valley Blockade

(2011) G. P. Lansbergen et al.   PHYSICAL REVIEW LETTERS

Observation of Spin-Selective Tunneling in SiGe Nanocrystals

(2011) G. Katsaros et al.   PHYSICAL REVIEW LETTERS

Tunable Spin Loading andT1of a Silicon Spin Qubit Measured by Single-Shot Readout

(2011) C. B. Simmons et al.   PHYSICAL REVIEW LETTERS

Determination of the Avogadro Constant by Counting the Atoms in aSi28Crystal

(2011) B. Andreas et al.   PHYSICAL REVIEW LETTERS

Natural and artificial atoms for quantum computation

(2011) Iulia Buluta et al.   REPORTS ON PROGRESS IN PHYSICS

Aluminum oxide for an effective gate in Si/SiGe two-dimensional electron gas systems

(2011) Yun-Sok Shin et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Pauli Spin Blockade in a Highly Tunable Silicon Double Quantum Dot

(2011) N. S. Lai et al.   Scientific Reports

Dynamically controlled charge sensing of a few-electron silicon quantum dot

(2011) C. H. Yang et al.   AIP Advances

Parallel spin filling and energy spectroscopy in few-electron Si metal-on-semiconductor-based quantum dots

(2010) M. Xiao et al.   APPLIED PHYSICS LETTERS

Double quantum dot with tunable coupling in an enhancement-mode silicon metal-oxide semiconductor device with lateral geometry

(2010) L. A. Tracy et al.   APPLIED PHYSICS LETTERS

Coherent transport through a double donor system in silicon

(2010) J. Verduijn et al.   APPLIED PHYSICS LETTERS

Charge sensing in intrinsic silicon quantum dots

(2010) G. J. Podd et al.   APPLIED PHYSICS LETTERS

Fast tunnel rates in Si/SiGe one-electron single and double quantum dots

(2010) Madhu Thalakulam et al.   APPLIED PHYSICS LETTERS

Drain current modulation in a nanoscale field-effect-transistor channel by single dopant implantation

(2010) B. C. Johnson et al.   APPLIED PHYSICS LETTERS

Si-based ultrasmall multiswitching single-electron transistor operating at room-temperature

(2010) S. J. Shin et al.   APPLIED PHYSICS LETTERS

Strong and Tunable Spin−Orbit Coupling of One-Dimensional Holes in Ge/Si Core/Shell Nanowires

(2010) Xiao-Jie Hao et al.   NANO LETTERS

Single ion implantation for single donor devices using Geiger mode detectors

(2010) E Bielejec et al.   NANOTECHNOLOGY

Resonant tunnelling features in quantum dots

(2010) C C Escott et al.   NANOTECHNOLOGY

Coherent control of Rydberg states in silicon

(2010) P. T. Greenland et al.   NATURE

Quantum computers

(2010) T. D. Ladd et al.   NATURE

Spin–orbit qubit in a semiconductor nanowire

(2010) S. Nadj-Perge et al.   NATURE

Single-shot readout of an electron spin in silicon

(2010) Andrea Morello et al.   NATURE

Spectroscopy of few-electron single-crystal silicon quantum dots

(2010) Martin Fuechsle et al.   Nature Nanotechnology

Hybrid superconductor–semiconductor devices made from self-assembled SiGe nanocrystals on silicon

(2010) G. Katsaros et al.   Nature Nanotechnology

Dephasing time of GaAs electron-spin qubits coupled to a nuclear bath exceeding 200 μs

(2010) Hendrik Bluhm et al.   Nature Physics

Valley splitting in a Si/SiGe quantum point contact

(2010) L M McGuire et al.   NEW JOURNAL OF PHYSICS

Electrostatically defined quantum dots in a Si/SiGe heterostructure

(2010) A Wild et al.   NEW JOURNAL OF PHYSICS

Ab initio Green's function calculation of hyperfine interactions for shallow defects in semiconductors

(2010) U. Gerstmann   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Singlet-triplet relaxation in multivalley silicon single quantum dots

(2010) L. Wang et al.   PHYSICAL REVIEW B

Heterointerface effects on the charging energy of the shallowD−ground state in silicon: Role of dielectric mismatch

(2010) M. J. Calderón et al.   PHYSICAL REVIEW B

Two-spin relaxation of P dimers in silicon

(2010) Massoud Borhani et al.   PHYSICAL REVIEW B

Theory of valley-orbit coupling in a Si/SiGe quantum dot

(2010) Mark Friesen et al.   PHYSICAL REVIEW B

Probe and control of the reservoir density of states in single-electron devices

(2010) M. Möttönen et al.   PHYSICAL REVIEW B

Electron paramagnetic resonance of boron acceptors in isotopically purified silicon

(2010) H. Tezuka et al.   PHYSICAL REVIEW B

Electron tunnel rates in a donor-silicon single electron transistor hybrid

(2010) Hans Huebl et al.   PHYSICAL REVIEW B

Pauli spin blockade and lifetime-enhanced transport in a Si/SiGe double quantum dot

(2010) C. B. Simmons et al.   PHYSICAL REVIEW B

Quantum dot spin qubits in silicon: Multivalley physics

(2010) Dimitrie Culcer et al.   PHYSICAL REVIEW B

Electron spin coherence of phosphorus donors in silicon: Effect of environmental nuclei

(2010) Eisuke Abe et al.   PHYSICAL REVIEW B

Interface roughness, valley-orbit coupling, and valley manipulation in quantum dots

(2010) Dimitrie Culcer et al.   PHYSICAL REVIEW B

Exchange coupling in silicon quantum dots: Theoretical considerations for quantum computation

(2010) Qiuzi Li et al.   PHYSICAL REVIEW B

Coherent electron transport by adiabatic passage in an imperfect donor chain

(2010) Rajib Rahman et al.   PHYSICAL REVIEW B

Electron Spin Decoherence in Isotope-Enriched Silicon

(2010) Wayne M. Witzel et al.   PHYSICAL REVIEW LETTERS

Single-Electron Transport through Single Dopants in a Dopant-Rich Environment

(2010) Michiharu Tabe et al.   PHYSICAL REVIEW LETTERS

Measurement of the Spin Relaxation Time of Single Electrons in a Silicon Metal-Oxide-Semiconductor-Based Quantum Dot

(2010) M. Xiao et al.   PHYSICAL REVIEW LETTERS

Electronic Spin Storage in an Electrically Readable Nuclear Spin Memory with a Lifetime >100 Seconds

(2010) D. R. McCamey et al.   SCIENCE

Observation of two-dimensional electron gas in a Si quantum well with mobility of 1.6×106 cm2/Vs

(2009) T. M. Lu et al.   APPLIED PHYSICS LETTERS

Horizontal position analysis of single acceptors in Si nanoscale field-effect transistors

(2009) M. A. H. Khalafalla et al.   APPLIED PHYSICS LETTERS

Charge sensing in enhancement mode double-top-gated metal-oxide-semiconductor quantum dots

(2009) E. P. Nordberg et al.   APPLIED PHYSICS LETTERS

Electrostatically defined few-electron double quantum dot in silicon

(2009) W. H. Lim et al.   APPLIED PHYSICS LETTERS

Dephasing of Si spin qubits due to charge noise

(2009) Dimitrie Culcer et al.   APPLIED PHYSICS LETTERS

Observation of the single-electron regime in a highly tunable silicon quantum dot

(2009) W. H. Lim et al.   APPLIED PHYSICS LETTERS

Quantum control and manipulation of donor electrons in Si-based quantum computing

(2009) M. J. Calderón et al.   JOURNAL OF APPLIED PHYSICS

Ultrasmall silicon quantum dots

(2009) F. A. Zwanenburg et al.   JOURNAL OF APPLIED PHYSICS

Atomic-Scale, All Epitaxial In-Plane Gated Donor Quantum Dot in Silicon

(2009) A. Fuhrer et al.   NANO LETTERS

Charge Sensing and Controllable Tunnel Coupling in a Si/SiGe Double Quantum Dot

(2009) C. B. Simmons et al.   NANO LETTERS

Spin States of the First Four Holes in a Silicon Nanowire Quantum Dot

(2009) Floris A. Zwanenburg et al.   NANO LETTERS

Tunable Kondo Effect in a Single Donor Atom

(2009) G. P. Lansbergen et al.   NANO LETTERS

Transport Spectroscopy of Single Phosphorus Donors in a Silicon Nanoscale Transistor

(2009) Kuan Yen Tan et al.   NANO LETTERS

Electrical creation of spin polarization in silicon at room temperature

(2009) Saroj P. Dash et al.   NATURE

Single-donor ionization energies in a nanoscale CMOS channel

(2009) M. Pierre et al.   Nature Nanotechnology

Universal quantum control of two-electron spin quantum bits using dynamic nuclear polarization

(2009) Sandra Foletti et al.   Nature Physics

Enrichment of silicon for a better kilogram

(2009) P. Becker et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

A Schottky top-gated two-dimensional electron system in a nuclear spin free Si/SiGe heterostructure

(2009) J. Sailer et al.   Physica Status Solidi-Rapid Research Letters

Realizing singlet-triplet qubits in multivalley Si quantum dots

(2009) Dimitrie Culcer et al.   PHYSICAL REVIEW B

Microwave-assisted transport in a single-donor silicon quantum dot

(2009) Enrico Prati et al.   PHYSICAL REVIEW B

Orbital Stark effect and quantum confinement transition of donors in silicon

(2009) Rajib Rahman et al.   PHYSICAL REVIEW B

Spin-dependent scattering in a silicon transistor

(2009) Rogério de Sousa et al.   PHYSICAL REVIEW B

Shallow donor states near a semiconductor-insulator-metal interface

(2009) Y. L. Hao et al.   PHYSICAL REVIEW B

Physical mechanisms of interface-mediated intervalley coupling in Si

(2009) A. L. Saraiva et al.   PHYSICAL REVIEW B

Electronic structure models of phosphorusδ-doped silicon

(2009) Damien J. Carter et al.   PHYSICAL REVIEW B

Gate-inducedg-factor control and dimensional transition for donors in multivalley semiconductors

(2009) Rajib Rahman et al.   PHYSICAL REVIEW B

Architecture for high-sensitivity single-shot readout and control of the electron spin of individual donors in silicon

(2009) A. Morello et al.   PHYSICAL REVIEW B

Enhancement-mode double-top-gated metal-oxide-semiconductor nanostructures with tunable lateral geometry

(2009) E. P. Nordberg et al.   PHYSICAL REVIEW B

Stationary and Transient Leakage Current in the Pauli Spin Blockade

(2009) F. Qassemi et al.   PHYSICAL REVIEW LETTERS

Mapping Donor Electron Wave Function Deformations at a Sub-Bohr Orbit Resolution

(2009) Seung H. Park et al.   PHYSICAL REVIEW LETTERS

Rapid Single-Shot Measurement of a Singlet-Triplet Qubit

(2009) C. Barthel et al.   PHYSICAL REVIEW LETTERS

Diameter-dependent dopant location in silicon and germanium nanowires

(2009) P. Xie et al.   PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA

Device fabrication and transport measurements of FinFETs built with28Si SOI wafers toward donor qubits in silicon

(2009) Cheuk Chi Lo et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Room temperature single ion detection with Geiger mode avalanche diode detectors

(2008) J. A. Seamons et al.   APPLIED PHYSICS LETTERS

A gate-defined silicon quantum dot molecule

(2008) Hongwu Liu et al.   APPLIED PHYSICS LETTERS

Ohmic conduction of sub-10nm P-doped silicon nanowires at cryogenic temperatures

(2008) F. J. Rueß et al.   APPLIED PHYSICS LETTERS

Broadband electrically detected magnetic resonance of phosphorus donors in a silicon field-effect transistor

(2008) L. H. Willems van Beveren et al.   APPLIED PHYSICS LETTERS

Valley splitting in Si quantum dots embedded in SiGe

(2008) S. Srinivasan et al.   APPLIED PHYSICS LETTERS

Charge transport in boron-doped nano MOSFETs: Towards single-dopant electronics

(2008) Y. Ono et al.   APPLIED SURFACE SCIENCE

Single atom doping for quantum device development in diamond and silicon

(2008) C. D. Weis et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B

Study of Single Silicon Quantum Dots’ Band Gap and Single-Electron Charging Energies by Room Temperature Scanning Tunneling Microscopy

(2008) Bashir Zaknoon et al.   NANO LETTERS

Significant Enhancement of Hole Mobility in [110] Silicon Nanowires Compared to Electrons and Bulk Silicon

(2008) A. K. Buin et al.   NANO LETTERS

Gate-controlled charge transfer in Si:P double quantum dots

(2008) F E Hudson et al.   NANOTECHNOLOGY

Bias spectroscopy and simultaneous single-electron transistor charge state detection of Si:P double dots

(2008) M Mitic et al.   NANOTECHNOLOGY

A reliable method for the counting and control of single ions for single-dopant controlled devices

(2008) T Shinada et al.   NANOTECHNOLOGY

Solid-state quantum memory using the 31P nuclear spin

(2008) John J. L. Morton et al.   NATURE

Spin blockade and lifetime-enhanced transport in a few-electron Si/SiGe double quantum dot

(2008) Nakul Shaji et al.   Nature Physics

Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET

(2008) G. P. Lansbergen et al.   Nature Physics

Singlet-triplet relaxation in two-electron silicon quantum dots

(2008) M. Prada et al.   PHYSICAL REVIEW B

Multiscale theory of valley splitting in the conduction band of a quantum well

(2008) Sucismita Chutia et al.   PHYSICAL REVIEW B

Quantum nondemolition measurements of single donor spins in semiconductors

(2008) Mohan Sarovar et al.   PHYSICAL REVIEW B

Model of valley interference effects on a donor electron close to aSi∕SiO2interface

(2008) M. J. Calderón et al.   PHYSICAL REVIEW B

Valley splitting in finite barrier quantum wells

(2008) Timothy B. Boykin et al.   PHYSICAL REVIEW B

Pauli-spin-blockade transport through a silicon double quantum dot

(2008) H. W. Liu et al.   PHYSICAL REVIEW B

Density functional study of⟨110⟩-oriented thin silicon nanowires

(2008) Pavel B. Sorokin et al.   PHYSICAL REVIEW B

Spin Echoes in the Charge Transport through Phosphorus Donors in Silicon

(2008) Hans Huebl et al.   PHYSICAL REVIEW LETTERS

Positioning of Strained Islands by Interaction with Surface Nanogrooves

(2008) G. Katsaros et al.   PHYSICAL REVIEW LETTERS

Spin States of Holes inGe/SiNanowire Quantum Dots

(2008) S. Roddaro et al.   PHYSICAL REVIEW LETTERS

Silicon as a model ion trap: Time domain measurements of donor Rydberg states

(2008) N. Q. Vinh et al.   PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA