Study of Single Silicon Quantum Dots’ Band Gap and Single-Electron Charging Energies by Room Temperature Scanning Tunneling Microscopy

Title
Study of Single Silicon Quantum Dots’ Band Gap and Single-Electron Charging Energies by Room Temperature Scanning Tunneling Microscopy
Authors
Keywords
-
Journal
NANO LETTERS
Volume 8, Issue 6, Pages 1689-1694
Publisher
American Chemical Society (ACS)
Online
2008-05-17
DOI
10.1021/nl080625b

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