Engineered valley-orbit splittings in quantum-confined nanostructures in silicon

Full Three-Dimensional Quantum Transport Simulation of Atomistic Interface Roughness in Silicon Nanowire FETs

(2011) SungGeun Kim et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Parallel spin filling and energy spectroscopy in few-electron Si metal-on-semiconductor-based quantum dots

(2010) M. Xiao et al.   APPLIED PHYSICS LETTERS

Theory of valley-orbit coupling in a Si/SiGe quantum dot

(2010) Mark Friesen et al.   PHYSICAL REVIEW B

Extended interface states enhance valley splitting inSi/SiO2

(2010) A. L. Saraiva et al.   PHYSICAL REVIEW B

Orbital Stark effect and quantum confinement transition of donors in silicon

(2009) Rajib Rahman et al.   PHYSICAL REVIEW B

Physical mechanisms of interface-mediated intervalley coupling in Si

(2009) A. L. Saraiva et al.   PHYSICAL REVIEW B

Valley splitting in Si quantum dots embedded in SiGe

(2008) S. Srinivasan et al.   APPLIED PHYSICS LETTERS

Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET

(2008) G. P. Lansbergen et al.   Nature Physics