Valley-Based Noise-Resistant Quantum Computation Using Si Quantum Dots

Measurement of valley splitting in high-symmetry Si/SiGe quantum dots

(2011) M. G. Borselli et al.   APPLIED PHYSICS LETTERS

Spin filling of valley–orbit states in a silicon quantum dot

(2011) W H Lim et al.   NANOTECHNOLOGY

Detection of charge motion in a non-metallic silicon isolated double quantum dot

(2011) T Ferrus et al.   NEW JOURNAL OF PHYSICS

Intervalley coupling for interface-bound electrons in silicon: An effective mass study

(2011) A. L. Saraiva et al.   PHYSICAL REVIEW B

Theory of single electron spin relaxation in Si/SiGe lateral coupled quantum dots

(2011) Martin Raith et al.   PHYSICAL REVIEW B

Disorder-Mediated Electron Valley Resonance in Carbon Nanotube Quantum Dots

(2011) András Pályi et al.   PHYSICAL REVIEW LETTERS

Pauli Spin Blockade in a Highly Tunable Silicon Double Quantum Dot

(2011) N. S. Lai et al.   Scientific Reports

A graphene quantum dot with a single electron transistor as an integrated charge sensor

(2010) Lin-Jun Wang et al.   APPLIED PHYSICS LETTERS

Parallel spin filling and energy spectroscopy in few-electron Si metal-on-semiconductor-based quantum dots

(2010) M. Xiao et al.   APPLIED PHYSICS LETTERS

Single-shot readout of an electron spin in silicon

(2010) Andrea Morello et al.   NATURE

Singlet-triplet relaxation in multivalley silicon single quantum dots

(2010) L. Wang et al.   PHYSICAL REVIEW B

Theory of valley-orbit coupling in a Si/SiGe quantum dot

(2010) Mark Friesen et al.   PHYSICAL REVIEW B

Quantum dot spin qubits in silicon: Multivalley physics

(2010) Dimitrie Culcer et al.   PHYSICAL REVIEW B

Interface roughness, valley-orbit coupling, and valley manipulation in quantum dots

(2010) Dimitrie Culcer et al.   PHYSICAL REVIEW B

Quantum computation with doped silicon cavities

(2010) M. Abanto et al.   PHYSICAL REVIEW B

Measurement of the Spin Relaxation Time of Single Electrons in a Silicon Metal-Oxide-Semiconductor-Based Quantum Dot

(2010) M. Xiao et al.   PHYSICAL REVIEW LETTERS

Charge sensing in enhancement mode double-top-gated metal-oxide-semiconductor quantum dots

(2009) E. P. Nordberg et al.   APPLIED PHYSICS LETTERS

Dephasing of Si spin qubits due to charge noise

(2009) Dimitrie Culcer et al.   APPLIED PHYSICS LETTERS

Observation of the single-electron regime in a highly tunable silicon quantum dot

(2009) W. H. Lim et al.   APPLIED PHYSICS LETTERS

Atomic-Scale, All Epitaxial In-Plane Gated Donor Quantum Dot in Silicon

(2009) A. Fuhrer et al.   NANO LETTERS

Physical mechanisms of interface-mediated intervalley coupling in Si

(2009) A. L. Saraiva et al.   PHYSICAL REVIEW B

Relaxation and Dephasing in a Two-ElectronC13Nanotube Double Quantum Dot

(2009) H. O. H. Churchill et al.   PHYSICAL REVIEW LETTERS

Valley splitting in Si quantum dots embedded in SiGe

(2008) S. Srinivasan et al.   APPLIED PHYSICS LETTERS

Scanning-probe spectroscopy of semiconductor donor molecules

(2008) I. Kuljanishvili et al.   Nature Physics

Spin blockade and lifetime-enhanced transport in a few-electron Si/SiGe double quantum dot

(2008) Nakul Shaji et al.   Nature Physics

Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET

(2008) G. P. Lansbergen et al.   Nature Physics

Singlet-triplet relaxation in two-electron silicon quantum dots

(2008) M. Prada et al.   PHYSICAL REVIEW B

Valley splitting in finite barrier quantum wells

(2008) Timothy B. Boykin et al.   PHYSICAL REVIEW B

Pauli-spin-blockade transport through a silicon double quantum dot

(2008) H. W. Liu et al.   PHYSICAL REVIEW B