Enhancement-mode double-top-gated metal-oxide-semiconductor nanostructures with tunable lateral geometry

Atomic-Scale, All Epitaxial In-Plane Gated Donor Quantum Dot in Silicon

(2009) A. Fuhrer et al.   NANO LETTERS

Architecture for high-sensitivity single-shot readout and control of the electron spin of individual donors in silicon

(2009) A. Morello et al.   PHYSICAL REVIEW B

Observation of percolation-induced two-dimensional metal-insulator transition in a Si MOSFET

(2009) L. A. Tracy et al.   PHYSICAL REVIEW B

A gate-defined silicon quantum dot molecule

(2008) Hongwu Liu et al.   APPLIED PHYSICS LETTERS

Lack of charge offset drift is a robust property of Si single electron transistors

(2008) Emmanouel Hourdakis et al.   APPLIED PHYSICS LETTERS

Spin blockade and lifetime-enhanced transport in a few-electron Si/SiGe double quantum dot

(2008) Nakul Shaji et al.   Nature Physics

Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET

(2008) G. P. Lansbergen et al.   Nature Physics

Pauli-spin-blockade transport through a silicon double quantum dot

(2008) H. W. Liu et al.   PHYSICAL REVIEW B

InSituReduction of Charge Noise inGaAs/AlxGa1−xAsSchottky-Gated Devices

(2008) Christo Buizert et al.   PHYSICAL REVIEW LETTERS

Suppressing Spin Qubit Dephasing by Nuclear State Preparation

(2008) D. J. Reilly et al.   SCIENCE