Effective mass theory of monolayerδdoping in the high-density limit

Ohm's Law Survives to the Atomic Scale

(2012) B. Weber et al.   SCIENCE

Phosphorus δ-doped silicon: mixed-atom pseudopotentials and dopant disorder effects

(2011) Damien J Carter et al.   NANOTECHNOLOGY

Electronic structure of realistically extended atomistically resolved disordered Si:Pδ-doped layers

(2011) Sunhee Lee et al.   PHYSICAL REVIEW B

Tunable Spin Loading andT1of a Silicon Spin Qubit Measured by Single-Shot Readout

(2011) C. B. Simmons et al.   PHYSICAL REVIEW LETTERS

Single-shot readout of an electron spin in silicon

(2010) Andrea Morello et al.   NATURE

Spectroscopy of few-electron single-crystal silicon quantum dots

(2010) Martin Fuechsle et al.   Nature Nanotechnology

Electron tunnel rates in a donor-silicon single electron transistor hybrid

(2010) Hans Huebl et al.   PHYSICAL REVIEW B

Physical mechanisms of interface-mediated intervalley coupling in Si

(2009) A. L. Saraiva et al.   PHYSICAL REVIEW B

Electronic structure models of phosphorusδ-doped silicon

(2009) Damien J. Carter et al.   PHYSICAL REVIEW B

Erratum: Electronic structure models of phosphorusδ-doped silicon [Phys. Rev. B79, 033204 (2009)]

(2009) Damien J. Carter et al.   PHYSICAL REVIEW B

Spin blockade and lifetime-enhanced transport in a few-electron Si/SiGe double quantum dot

(2008) Nakul Shaji et al.   Nature Physics

Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET

(2008) G. P. Lansbergen et al.   Nature Physics

Multiscale theory of valley splitting in the conduction band of a quantum well

(2008) Sucismita Chutia et al.   PHYSICAL REVIEW B