Fast tunnel rates in Si/SiGe one-electron single and double quantum dots

Measurement of the Spin Relaxation Time of Single Electrons in a Silicon Metal-Oxide-Semiconductor-Based Quantum Dot

(2010) M. Xiao et al.   PHYSICAL REVIEW LETTERS

Observation of the single-electron regime in a highly tunable silicon quantum dot

(2009) W. H. Lim et al.   APPLIED PHYSICS LETTERS

Atomic-Scale, All Epitaxial In-Plane Gated Donor Quantum Dot in Silicon

(2009) A. Fuhrer et al.   NANO LETTERS

Charge Sensing and Controllable Tunnel Coupling in a Si/SiGe Double Quantum Dot

(2009) C. B. Simmons et al.   NANO LETTERS

Spin States of the First Four Holes in a Silicon Nanowire Quantum Dot

(2009) Floris A. Zwanenburg et al.   NANO LETTERS

Architecture for high-sensitivity single-shot readout and control of the electron spin of individual donors in silicon

(2009) A. Morello et al.   PHYSICAL REVIEW B

Enhancement-mode double-top-gated metal-oxide-semiconductor nanostructures with tunable lateral geometry

(2009) E. P. Nordberg et al.   PHYSICAL REVIEW B

Spin blockade and lifetime-enhanced transport in a few-electron Si/SiGe double quantum dot

(2008) Nakul Shaji et al.   Nature Physics

Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET

(2008) G. P. Lansbergen et al.   Nature Physics

Pauli-spin-blockade transport through a silicon double quantum dot

(2008) H. W. Liu et al.   PHYSICAL REVIEW B