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Title
Singlet-triplet relaxation in SiGe/Si/SiGe double quantum dots
Authors
Keywords
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Journal
JOURNAL OF APPLIED PHYSICS
Volume 110, Issue 4, Pages 043716
Publisher
AIP Publishing
Online
2011-08-26
DOI
10.1063/1.3625240
References
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Related references
Note: Only part of the references are listed.- Theory of single electron spin relaxation in Si/SiGe lateral coupled quantum dots
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- Electrostatically defined quantum dots in a Si/SiGe heterostructure
- (2010) A Wild et al. NEW JOURNAL OF PHYSICS
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- (2010) L. Wang et al. PHYSICAL REVIEW B
- Pauli spin blockade and lifetime-enhanced transport in a Si/SiGe double quantum dot
- (2010) C. B. Simmons et al. PHYSICAL REVIEW B
- Quantum dot spin qubits in silicon: Multivalley physics
- (2010) Dimitrie Culcer et al. PHYSICAL REVIEW B
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- (2010) Qiuzi Li et al. PHYSICAL REVIEW B
- Measurement of the Spin Relaxation Time of Single Electrons in a Silicon Metal-Oxide-Semiconductor-Based Quantum Dot
- (2010) M. Xiao et al. PHYSICAL REVIEW LETTERS
- Spin relaxation in silicon coupled quantum dots
- (2009) Wei Pan et al. APPLIED PHYSICS LETTERS
- Electrostatically defined few-electron double quantum dot in silicon
- (2009) W. H. Lim et al. APPLIED PHYSICS LETTERS
- Realizing singlet-triplet qubits in multivalley Si quantum dots
- (2009) Dimitrie Culcer et al. PHYSICAL REVIEW B
- Physical mechanisms of interface-mediated intervalley coupling in Si
- (2009) A. L. Saraiva et al. PHYSICAL REVIEW B
- Electron spin blockade and singlet-triplet transition in a silicon single electron transistor
- (2009) Binhui Hu et al. PHYSICAL REVIEW B
- Spin blockade and lifetime-enhanced transport in a few-electron Si/SiGe double quantum dot
- (2008) Nakul Shaji et al. Nature Physics
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- (2008) H. W. Liu et al. PHYSICAL REVIEW B
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