Interfacial chemistry and valence band offset between GaN and Al2O3 studied by X-ray photoelectron spectroscopy

Band offset measurements of the GaN/dielectric interfaces

(2012) Mary R. Coan et al.   JOURNAL OF APPLIED PHYSICS

Electrical properties of atomic layer deposited aluminum oxide on gallium nitride

(2011) Michele Esposto et al.   APPLIED PHYSICS LETTERS

Presence and origin of interface charges at atomic-layer deposited Al2O3/III-nitride heterojunctions

(2011) Satyaki Ganguly et al.   APPLIED PHYSICS LETTERS

High-Performance Microwave Gate-Recessed AlGaN/AlN/GaN MOS-HEMT With 73% Power-Added Efficiency

(2011) Yue Hao et al.   IEEE ELECTRON DEVICE LETTERS

Effects of oxidation on surface chemical states and barrier height of AlGaN/GaN heterostructures

(2010) Masataka Higashiwaki et al.   APPLIED PHYSICS LETTERS

Oxidation and the origin of the two-dimensional electron gas in AlGaN/GaN heterostructures

(2010) M. S. Miao et al.   JOURNAL OF APPLIED PHYSICS

Reduction of native oxides on GaAs during atomic layer growth of Al2O3

(2009) Hang Dong Lee et al.   APPLIED PHYSICS LETTERS

GaAs interfacial self-cleaning by atomic layer deposition

(2008) C. L. Hinkle et al.   APPLIED PHYSICS LETTERS