☆ 4.3 Article

Normally-Off AlGaN/GaN High Electron Mobility Transistors with Thin and High Al Composition Barrier Layers

JAPANESE JOURNAL OF APPLIED PHYSICS (2013)

Journal

JAPANESE JOURNAL OF APPLIED PHYSICS

Volume 52, Issue 11R, Pages 111001

Publisher

IOP Publishing

DOI: 10.7567/jjap.52.111001

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Categories

Physics, Applied

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