Investigation of gate leakage mechanism in Al2O3/Al0.55Ga0.45N/GaN metal-oxide-semiconductor high-electron-mobility transistors

Investigation of trap states in high Al content AlGaN/GaN high electron mobility transistors by frequency dependent capacitance and conductance analysis

(2014) Jie-Jie Zhu et al.   AIP Advances

On reverse gate leakage current of GaN high electron mobility transistors on silicon substrate

(2013) Ling Xia et al.   APPLIED PHYSICS LETTERS

Gate Leakage Mechanisms in AlGaN/GaN and AlInN/GaN HEMTs: Comparison and Modeling

(2013) Sreenidhi Turuvekere et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Poole Frenkel current and Schottky emission in SiN gate dielectric in AlGaN/GaN metal insulator semiconductor heterostructure field effect transistors

(2012) Mina J. Hanna et al.   APPLIED PHYSICS LETTERS

150-GHz Cutoff Frequencies and 2-W/mm Output Power at 40 GHz in a Millimeter-Wave AlGaN/GaN HEMT Technology on Silicon

(2012) Diego Marti et al.   IEEE ELECTRON DEVICE LETTERS

InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and $f_{T}$ of 370 GHz

(2012) Yuanzheng Yue et al.   IEEE ELECTRON DEVICE LETTERS

Temperature-dependent forward gate current transport in atomic-layer-deposited Al2O3/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor

(2011) Z. H. Liu et al.   APPLIED PHYSICS LETTERS

High-Performance Microwave Gate-Recessed AlGaN/AlN/GaN MOS-HEMT With 73% Power-Added Efficiency

(2011) Yue Hao et al.   IEEE ELECTRON DEVICE LETTERS

On the reverse gate leakage current of AlGaN/GaN high electron mobility transistors

(2010) Dawei Yan et al.   APPLIED PHYSICS LETTERS

Leakage current by Frenkel–Poole emission in Ni/Au Schottky contacts on Al0.83In0.17N/AlN/GaN heterostructures

(2009) Engin Arslan et al.   APPLIED PHYSICS LETTERS

Effect of Gate Leakage in the Subthreshold Characteristics of AlGaN/GaN HEMTs

(2008) J.W. Chung et al.   IEEE ELECTRON DEVICE LETTERS