☆ 4.6 Article

Performance of Fully Recessed AlGaN/GaN MOSFET Prepared on GaN Buffer Layer Grown With AlSiC Precoverage on Silicon Substrate

IEEE ELECTRON DEVICE LETTERS (2013)

Journal

IEEE ELECTRON DEVICE LETTERS

Volume 34, Issue 8, Pages 975-977

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

DOI: 10.1109/LED.2013.2265351

Keywords

AlGaN/GaN; AlSiC precoverage layer; compressive stress; crack free; subthreshold slope

Categories

Engineering, Electrical & Electronic

Funding

Kyungpook National University
National Research Foundation of Korea [2012-0005671]
National Research Foundation of Korea [2011-0016222, R33-2012-000-10055-0] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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Abstract

A crack-free AlGaN/GaN heterostrucure is grown on 4-in Si (111) substrate with AlSiC precoverage layer. Covering the Si surface with the AlSiC layer, until the growth of the AlN wetting buffer layer, is found to be effective in compensating the strong tensile stress in the GaN layer grown on Si substrate. The metal-oxide-semiconductor field-effect transistor, fabricated on this AlGaN/GaN heterostructure, exhibits excellent normally-off characteristics with threshold voltage of 7.2 V, maximum drain current of 120 mA/mm, ON/OFF current ratio of similar to 10(8), and subthreshold slope of 80 mV/decade.

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