Article
Engineering, Electrical & Electronic
Yunlong He, Qing He, Minhan Mi, Meng Zhang, Chong Wang, Ling Yang, Xiaohua Ma, Yue Hao
Summary: This article describes the fabrication of fully removed AlGaN barrier recessed-gate normally off AlGaN/GaN HEMTs with N2O plasma treatment, achieving devices with excellent characteristics and demonstrating a high breakdown electric field value.
IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS
(2021)
Article
Physics, Multidisciplinary
Xinchuang Zhang, Mei Wu, Bin Hou, Xuerui Niu, Hao Lu, Fuchun Jia, Meng Zhang, Jiale Du, Ling Yang, Xiaohua Ma, Yue Hao
Summary: The in-situ treatment of N2O radicals on the gate region of recessed-gate AlGaN/GaN HEMTs can effectively improve device performance by reducing gate leakage currents and increasing on/off current ratio and f(T).
Article
Physics, Applied
Ding Wang, Ping Wang, Minming He, Jiangnan Liu, Shubham Mondal, Mingtao Hu, Danhao Wang, Yuanpeng Wu, Tao Ma, Zetian Mi
Summary: In this Letter, fully epitaxial ScAlN/AlGaN/GaN based ferroelectric high electron mobility transistors (HEMTs) were demonstrated using molecular beam epitaxy. The fabricated ferroelectric gate HEMTs showed counterclockwise hysteretic transfer curves with a wide threshold voltage tuning range, a large ON/OFF ratio, and reconfigurable output characteristics. The high quality ferroelectric gate stack and effective ferroelectric polarization coupling lead to improved subthreshold performance. These results provide fundamental insight into the ferroelectric polarization coupling and threshold tuning processes in ferroelectric nitride heterostructures and have promising applications in next-generation electronics.
APPLIED PHYSICS LETTERS
(2023)
Article
Engineering, Electrical & Electronic
Duong Dai Nguyen, Yuchen Deng, Toshi-kazu Suzuki
Summary: We have systematically investigated low-frequency noise in metal-insulator-semiconductor field-effect transistors with non-gate-recessed or partially-gate-recessed structures using AlTiO gate insulators. We found different noise spectra for drain current in different regimes and evaluated the Hooge parameters. The results suggest that electron traps introduced by the recess etching process in the remaining AlGaN and traps in AlTiO near the AlTiO/AlGaN interface contribute to the observed low-frequency noise.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
(2023)
Article
Physics, Condensed Matter
Jialin Li, Yian Yin, Ni Zeng, Fengbo Liao, Mengxiao Lian, Xichen Zhang, Keming Zhang, Jingbo Li
Summary: This article proposes a recessed p-GaN HEMT covered with Al2O3 and a composite recessed-gate HEMT. By optimizing the structure, high saturation current, high transconductance and a relatively high threshold voltage can be achieved, which is of great significance for improving device performance and application prospects.
SUPERLATTICES AND MICROSTRUCTURES
(2022)
Article
Physics, Applied
Yat Hon Ng, Zheyang Zheng, Li Zhang, Ruizi Liu, Tao Chen, Sirui Feng, Qiming Shao, Kevin J. Chen
Summary: This study investigates the hole distribution and transport in the p-GaN/AlGaN/GaN heterostructure through experimental measurements and simulations. The results show that the p-channel of this structure is composed of bulk holes in the p-GaN and a two-dimensional hole gas (2DHG) at the p-GaN/AlGaN interface. Both components contribute significantly to lateral p-type conduction at room temperature. The complementary temperature responses of these components enhance conductivity at both high and low temperatures.
APPLIED PHYSICS LETTERS
(2023)
Article
Engineering, Electrical & Electronic
Hsin-Ying Lee, Jhang-Jie Jian, Ching-Ting Lee
Summary: This article investigates the features of quadruple gate and quadruple T-gate structures in AlGaN/GaN MOSHEMTs, showing improved saturation drain-source current and maximum transconductance compared to conventional single-gate structure. By utilizing quadruple gate structure, the unit gain cutoff frequency and maximum oscillation frequency were significantly enhanced, further improved with quadruple T-gate structure, attributed to the enhancement of transconductance and reduction of parasitic elements.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Engineering, Electrical & Electronic
Jianwen Sun, Teng Zhan, Robert Sokolovskij, Zewen Liu, Pasqualina M. Sarro, Guoqi Zhang
Summary: A suspended gate-recessed Pt/AlGaN/GaN heterostructure gas sensor with an integrated micro-heater was fabricated and characterized using a precision two-step gate recess technique. The sensitivity and current change to NO2/air were significantly improved compared to conventional devices, and the response time was reduced to only about 25% of the value for conventional devices. The sensor also demonstrated excellent repeatability and cross-sensitivity.
IEEE SENSORS JOURNAL
(2021)
Article
Physics, Applied
Jie-Long Liu, Jie-Jie Zhu, Min-Han Mi, Qing Zhu, Si-Yu Liu, Peng-Fei Wang, Yu-Wei Zhou, Zi-Yue Zhao, Jiu-Ding Zhou, Meng Zhang, Mei Wu, Bin Hou, Hong Wang, Ling Yang, Xiao-Hua Ma, Yue Hao
Summary: In this study, high-performance millimeter-wave AlGaN/GaN structures with a Si-rich SiN passivation layer were proposed for high-electron-mobility transistors (HEMTs). It was found that the presence of the Si-rich SiN layer reduced the number of deep-level surface traps, resulting in suppressed current collapse and decreased V-knee. Additionally, the devices with the Si-rich SiN layer exhibited enhanced power performance.
APPLIED PHYSICS LETTERS
(2022)
Article
Chemistry, Multidisciplinary
Yuxuan Chen, Ke Jiang, Xiaojuan Sun, Zi-Hui Zhang, Shanli Zhang, Jianwei Ben, Bingxiang Wang, Long Guo, Dabing Li
Summary: We proposed an alternative strategy to optimize the metal/n-AlGaN contact by introducing a heterostructure with a polarization effect and by etching a recess structure through the heterostructure beneath the n-contact metal. This strategy could simultaneously decrease the Schottky barrier height as well as provide a better carrier transport channel, enhancing both the thermionic emission and tunneling processes. This investigation provides an alternative approach to obtain a good n-contact, especially for Al-rich AlGaN-based devices, such as diodes and LEDs.
NANOSCALE ADVANCES
(2023)
Article
Engineering, Electrical & Electronic
Hao Zou, Lin-an Yang, Xiao-hua Ma, Yue Hao
Summary: By comparing the effects of various gate field plate structures on AlGaN/GaN HEMTs, it is found that different structures have different impacts on the device performance. The breakdown characteristics and the cut-off frequency characteristic need to be balanced according to actual applications.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
(2021)
Article
Physics, Applied
Heng Zhou, Yuanjie Lv, Mingyan Wang, Peng Cui, Zhaojun Lin
Summary: In this study, GaN-based side-gate heterostructure transistors (SGHTs) with two different electrical operating modes were fabricated. The first mode functions as a common-source voltage amplifier with low power consumption and a broad input signal range, while the second mode allows for traditional GaN high electron mobility transistor operation.
APPLIED PHYSICS LETTERS
(2022)
Article
Engineering, Electrical & Electronic
Wen Shi, Qimeng Jiang, Tiantian Luan, Sen Huang, Xinhua Wang, Fuqiang Guo, Yixu Yao, Kexin Deng, Lan Bi, Jie Fan, Haibo Yin, Ke Wei, Wenjuan Xiong, Yankui Li, Haojie Jiang, Junfeng Li, Xinyu Liu
Summary: In this study, enhancement-mode GaN-based MIS-HEMTs were fabricated using RTCVD SiNx gate dielectric and PEALD SiNx interfacial layer, showing low V-TH hysteresis and interface trap density, confirming the improvement of interface quality through various measurements.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Engineering, Electrical & Electronic
Weining Liu, Chi Sun, Xing Wei, Li Zhang, Xiaodong Zhang, Wei Huang, Yong Cai, Guohao Yu, Baoshun Zhang
Summary: This work introduces a new type of p-type polarization-induced doping recessed-gate p-channel InGaN/GaN/AlGaN heterostructure field-effect transistor, which increases the current density of the device by introducing different material structures and doping methods, and also enables the adjustment of threshold voltages. This study provides reference information for the design of E-mode high-performance p-channel GaN devices.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
(2021)
Article
Engineering, Electrical & Electronic
Jingyu Shen, Chao Yang, Liang Jing, Jingwei Guo, Ping Li, Hao Wu, Shengdong Hu
Summary: In this study, an enhancement mode p-GaN gate HEMT with selective regrowth and strain engineering has been proposed. The device shows improved 2DEG density and surface electric field distribution, leading to significant improvements in ON-resistance and breakdown voltage.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Materials Science, Multidisciplinary
Lars Heuken, Alessandro Ottaviani, Dirk Fahle, Thorsten Zweipfennig, Gerrit Luekens, Holger Kalisch, Andrei Vescan, Michael Heuken, Joachim N. Burghartz
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
(2020)
Article
Materials Science, Multidisciplinary
Arne Debald, Simon Kotzea, Jona Riedel, Michael Heuken, Holger Kalisch, Andrei Vescan
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
(2020)
Article
Engineering, Electrical & Electronic
L. Heuken, M. Kortemeyer, A. Ottaviani, M. Schroeder, M. Alomari, D. Fahle, M. Marx, M. Heuken, H. Kalisch, A. Vescan, J. N. Burghartz
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2020)
Article
Nanoscience & Nanotechnology
S. Besendoerfer, E. Meissner, T. Zweipfennig, H. Yacoub, D. Fahle, H. Behmenburg, H. Kalisch, A. Vescan, J. Friedrich, T. Erlbacher
Article
Nanoscience & Nanotechnology
Daniel S. Schneider, Annika Grundmann, Andreas Bablich, Vikram Passi, Satender Kataria, Holger Kalisch, Michael Heuken, Andrei Vescan, Daniel Neumaier, Max C. Lemme
Article
Engineering, Electrical & Electronic
Paula Palacios, Muh-Dey Wei, Thorsten Zweipfennig, Ahmed Hamed, Carsten Beckmann, Holger Kalisch, Andrei Vescan, Renato Negra
Summary: The high-temperature 2.1 GHz oscillator based on AlGaN/GaN HEMT was successfully designed, implemented, and characterized. The circuit, consisting of a single transistor and no additional passive components, was extensively tested up to 300°C to extract models for sustainable oscillation at high temperatures. Measurements up to 230°C showed promising performance with 0 dBm output power and -74 dBc/Hz phase noise at 1 MHz offset.
ELECTRONICS LETTERS
(2021)
Article
Physics, Applied
Carsten Beckmann, Jens Wieben, Thorsten Zweipfennig, Arno Kirchbruecher, Jasmin Ehrler, Robert Stamm, Zineng Yang, Holger Kalisch, Andrei Vescan
Summary: GaN/Al(x)Ga1-xN heterostructures were grown to study the formation of two-dimensional hole gases (2DHG). The influence of Al mole fraction and GaN channel thickness on the properties of 2DHG was investigated. The experimental results are consistent with theoretical predictions.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2022)
Correction
Multidisciplinary Sciences
Shangshu Wu, Zongde Kou, Qingquan Lai, Si Lan, Shyam Swaroop Katnagallu, Horst Hahn, Shabnam Taheriniya, Gerhard Wilde, Herbert Gleiter, Tao Feng
NATURE COMMUNICATIONS
(2022)
Article
Chemistry, Multidisciplinary
Songyao Tang, Annika Grundmann, Hleb Fiadziushkin, Zhaodong Wang, Susanne Hoffmann-Eifert, Amir Ghiami, Arne Debald, Michael Heuken, Andrei Vescan, Holger Kalisch
Summary: A novel two-stage migration-enhanced MOCVD process is introduced to realize the deposition of wafer-scale monolayers of tungsten disulfide and tungsten diselenide with suppressed bilayer nucleation. This approach provides a reliable basis for the development of large-scale deposition techniques for transition metal dichalcogenide monolayers.
CRYSTAL GROWTH & DESIGN
(2023)
Article
Chemistry, Physical
Henrik Woerdenweber, Annika Grundmann, Zhaodong Wang, Susanne Hoffmann-Eifert, Holger Kalisch, Andrei Vescan, Michael Heuken, Rainer Waser, Silvia Karthaeuser
Summary: Scanning probe methods and Raman spectroscopy were used to analyze the electronic and structural properties of monolayer and bilayer 2H-MoS2 on single-layer graphene-coated sapphire substrates. It was found that there was almost no interface coupling between ML MoS2 and graphene, resulting in a bandgap value of 2.23 eV. However, if graphene was involved in hydrogen bonds with the sapphire surface, the bandgap reduced to 1.98 eV due to increased interlayer coupling. Additionally, a in-gap acceptor state about 0.9 eV above the valence band minimum of MoS2 was observed on locally elevated positions, which was attributed to local bending strain in MoS2 nanosheets. These findings provide insights into the impact of the substrate on the topography and band alignment of ML MoS2/SLG heterostructures.
JOURNAL OF PHYSICAL CHEMISTRY C
(2023)
Article
Nanoscience & Nanotechnology
Henrik Myja, Zhiqiao Yang, Irene A. Goldthorpe, Alexander J. B. Jones, Kevin P. Musselman, Annika Grundmann, Holger Kalisch, Andrei Vescan, Michael Heuken, Tilmar Kuemmell, Gerd Bacher
Summary: Transition metal dichalcogenide (TMDC) monolayers have emerged as highly promising semiconducting materials for optoelectronic applications, with their direct band gap in the visible to near-infrared spectral range. In this work, transparent light-emitting devices (LEDs) were fabricated using TMDC monolayers and a silver nanowire (AgNW) network as a transparent top electrode. The devices showed good performance with an average transmittance of over 60% in the visible spectral range, emissive areas of several mm(2), and a turn-on voltage of around 3 V.
Article
Engineering, Electrical & Electronic
Carsten Beckmann, Zineng Yang, Jens Wieben, Thorsten Zweipfennig, Jasmin Ehrler, Arno Kirchbrucher, Holger Kalisch, Andrei Vescan
Summary: This paper reports on the study of p-channel metal-insulator-semiconductor heterostructure field-effect transistors (MISHFET) based on p-GaN/uid-GaN/Al0.29Ga0.71N single heterostructures. The impact of p-GaN layer removal and channel layer thickness adjustment on the characteristics of the MISHFET is investigated. The results show that the fabricated devices exhibit either depletion-mode or enhancement-mode operation, depending on the remaining GaN thickness.
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
(2023)
Article
Materials Science, Multidisciplinary
Annika Grundmann, Clifford McAleese, Ben Richard Conran, Andrew Pakes, Dominik Andrzejewski, Tilmar Kuemmell, Gerd Bacher, Kenneth Boh Khin Teo, Michael Heuken, Holger Kalisch, Andrei Vescan
Article
Materials Science, Multidisciplinary
S. Sanders, D. Stuemmler, J. D. Gerber, J. H. Seidel, G. Simkus, M. Heuken, A. Vescan, H. Kalisch
Article
Materials Science, Multidisciplinary
Gintautas Simkus, Simon Sanders, Dominik Stuemmler, Andrei Vescan, Holger Kalisch, Michael Heuken
