The effect of interface processing on the distribution of interfacial defect states and the C-V characteristics of III-V metal-oxide-semiconductor field effect transistors

Improved interfacial state density in Al2O3/GaAs interfaces using metal-organic chemical vapor deposition

(2010) Cheng-Wei Cheng et al.   APPLIED PHYSICS LETTERS

Model of interface states at III-V oxide interfaces

(2009) John Robertson   APPLIED PHYSICS LETTERS

Detection of Ga suboxides and their impact on III-V passivation and Fermi-level pinning

(2009) C. L. Hinkle et al.   APPLIED PHYSICS LETTERS

In situ metal-organic chemical vapor deposition atomic-layer deposition of aluminum oxide on GaAs using trimethyaluminum and isopropanol precursors

(2008) Cheng-Wei Cheng et al.   APPLIED PHYSICS LETTERS

Capacitance–Voltage Characterization of GaAs–Oxide Interfaces

(2008) G. Brammertz et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Adsorption of molecular oxygen on the reconstructed β2(2×4)-GaAs(001) surface: A first-principles study

(2008) M. Scarrozza et al.   SURFACE SCIENCE