A systematic study of (NH4)2S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al2O3/In0.53Ga0.47As/InP system for n-type and p-type In0.53Ga0.47As epitaxial layers

Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer

(2010) A. O’Mahony et al.   APPLIED PHYSICS LETTERS

Modeling the capacitance-voltage response of In0.53Ga0.47As metal-oxide-semiconductor structures: Charge quantization and nonparabolic corrections

(2010) T. P. O’Regan et al.   APPLIED PHYSICS LETTERS

Border traps in Al2O3/In0.53Ga0.47As (100) gate stacks and their passivation by hydrogen anneals

(2010) Eun Ji Kim et al.   APPLIED PHYSICS LETTERS

The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitor

(2010) H. D. Trinh et al.   APPLIED PHYSICS LETTERS

Origin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated InGaAs substrates

(2010) Byungha Shin et al.   APPLIED PHYSICS LETTERS

Small-Signal Response of Inversion Layers in High-Mobility $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ MOSFETs Made With Thin High- $\kappa$ Dielectrics

(2010) Ashkar Ali et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

First-principles study of GaAs(001)-β2(2×4) surface oxidation and passivation with H, Cl, S, F, and GaO

(2010) Weichao Wang et al.   JOURNAL OF APPLIED PHYSICS

Identification and thermal stability of the native oxides on InGaAs using synchrotron radiation based photoemission

(2010) B. Brennan et al.   JOURNAL OF APPLIED PHYSICS

Temperature and frequency dependent electrical characterization of HfO2/InxGa1−xAs interfaces using capacitance-voltage and conductance methods

(2009) É. O’Connor et al.   APPLIED PHYSICS LETTERS

Model of interface states at III-V oxide interfaces

(2009) John Robertson   APPLIED PHYSICS LETTERS

On the interface state density at In0.53Ga0.47As/oxide interfaces

(2009) G. Brammertz et al.   APPLIED PHYSICS LETTERS

Extraction of the Effective Mobility of $ \hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$MOSFETs

(2009) C.L. Hinkle et al.   IEEE ELECTRON DEVICE LETTERS

Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition

(2009) R. D. Long et al.   JOURNAL OF APPLIED PHYSICS

Electrical study of sulfur passivated In0.53Ga0.47As MOS capacitor and transistor with ALD Al2O3 as gate insulator

(2009) Han-Chung Lin et al.   MICROELECTRONIC ENGINEERING

Pre-atomic layer deposition surface cleaning and chemical passivation of (100) In0.2Ga0.8As and deposition of ultrathin Al2O3 gate insulators

(2008) Byungha Shin et al.   APPLIED PHYSICS LETTERS

In situ H2S passivation of In0.53Ga0.47As∕InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO2 gate dielectric

(2008) E. O’Connor et al.   APPLIED PHYSICS LETTERS

Atomic-layer-deposited HfO2 on In0.53Ga0.47As: Passivation and energy-band parameters

(2008) Y. C. Chang et al.   APPLIED PHYSICS LETTERS

Half-cycle atomic layer deposition reaction studies of Al2O3 on In0.2Ga0.8As (100) surfaces

(2008) M. Milojevic et al.   APPLIED PHYSICS LETTERS

HfO2 gate dielectric on (NH4)2S passivated (100) GaAs grown by atomic layer deposition

(2008) P. T. Chen et al.   JOURNAL OF APPLIED PHYSICS

Improved Electrical Properties of Gd[sub 2]O[sub 3]∕GaAs Capacitor with Modified Wet-Chemical Clean and Sulfidization Procedures

(2008) Chao-Ching Cheng et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY