InP/InGaAs Composite Metal–Oxide–Semiconductor Field-Effect Transistors with Regrown Source and Al2O3Gate Dielectric Exhibiting Maximum Drain Current Exceeding 1.3 mA/µm
InP/InGaAs Composite Metal–Oxide–Semiconductor Field-Effect Transistors with Regrown Source and Al2O3Gate Dielectric Exhibiting Maximum Drain Current Exceeding 1.3 mA/µm
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