Impact of Interfacial Oxygen Content on Bonding, Stability, Band Offsets, and Interface States of GaAs:HfO2 Interfaces

Title
Impact of Interfacial Oxygen Content on Bonding, Stability, Band Offsets, and Interface States of GaAs:HfO2 Interfaces
Authors
Keywords
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Journal
Journal of Physical Chemistry C
Volume 114, Issue 51, Pages 22610-22618
Publisher
American Chemical Society (ACS)
Online
2010-12-08
DOI
10.1021/jp107880r

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