Enhanced Hole Mobility in High Ge Content Asymmetrically Strained-SiGe p-MOSFETs

Published 2010 View Full Article

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Title
Enhanced Hole Mobility in High Ge Content Asymmetrically Strained-SiGe p-MOSFETs
Authors
Keywords
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Journal
IEEE ELECTRON DEVICE LETTERS
Volume 31, Issue 8, Pages 782-784
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2010-06-25
DOI
10.1109/led.2010.2050574
References
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