Atomic-layer-deposited Al2O3/GaAs metal-oxide-semiconductor field-effect transistor on Si substrate using aspect ratio trapping technique

Published 2008 View Full Article

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Title
Atomic-layer-deposited Al2O3/GaAs metal-oxide-semiconductor field-effect transistor on Si substrate using aspect ratio trapping technique
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 93, Issue 24, Pages 242106
Publisher
AIP Publishing
Online
2008-12-18
DOI
10.1063/1.3050466
References
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