The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitor

Temperature and frequency dependent electrical characterization of HfO2/InxGa1−xAs interfaces using capacitance-voltage and conductance methods

(2009) É. O’Connor et al.   APPLIED PHYSICS LETTERS

Metal-oxide-semiconductor capacitors with erbium oxide dielectrics on In0.53Ga0.47As channels

(2009) Yoontae Hwang et al.   APPLIED PHYSICS LETTERS

Metal-oxide-semiconductor capacitors with ZrO2 dielectrics grown on In0.53Ga0.47As by chemical beam deposition

(2009) Roman Engel-Herbert et al.   APPLIED PHYSICS LETTERS

The significance of core-level electron binding energies on the proper analysis of InGaAs interfacial bonding

(2009) C. L. Hinkle et al.   APPLIED PHYSICS LETTERS

On the interface state density at In0.53Ga0.47As/oxide interfaces

(2009) G. Brammertz et al.   APPLIED PHYSICS LETTERS

Unpinned Interface Between Al[sub 2]O[sub 3] Gate Dielectric Layer Grown by Atomic Layer Deposition and Chemically Treated n-In[sub 0.53]Ga[sub 0.47]As(001)

(2009) Byungha Shin et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

0.8-V Supply Voltage Deep-Submicrometer Inversion-Mode $\hbox{In}_{0.75}\hbox{Ga}_{0.25}\hbox{As}$ MOSFET

(2009) Y. Q. Wu et al.   IEEE ELECTRON DEVICE LETTERS

Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition

(2009) R. D. Long et al.   JOURNAL OF APPLIED PHYSICS

Electrical study of sulfur passivated In0.53Ga0.47As MOS capacitor and transistor with ALD Al2O3 as gate insulator

(2009) Han-Chung Lin et al.   MICROELECTRONIC ENGINEERING

In0.53Ga0.47As based metal oxide semiconductor capacitors with atomic layer deposition ZrO2 gate oxide demonstrating low gate leakage current and equivalent oxide thickness less than 1nm

(2008) S. Koveshnikov et al.   APPLIED PHYSICS LETTERS

In situ H2S passivation of In0.53Ga0.47As∕InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO2 gate dielectric

(2008) E. O’Connor et al.   APPLIED PHYSICS LETTERS

Atomic-layer-deposited HfO2 on In0.53Ga0.47As: Passivation and energy-band parameters

(2008) Y. C. Chang et al.   APPLIED PHYSICS LETTERS

Half-cycle atomic layer deposition reaction studies of Al2O3 on (NH4)2S passivated GaAs(100) surfaces

(2008) M. Milojevic et al.   APPLIED PHYSICS LETTERS