The reduction of efficiency droop by Al0.82In0.18N/GaN superlattice electron blocking layer in (0001) oriented GaN-based light emitting diodes

Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes

(2011) Emmanouil Kioupakis et al.   APPLIED PHYSICS LETTERS

Temperature Dependent Capacitance–Voltage Analysis of Unintentionally Doped and Si Doped Al$_{0.82}$In$_{0.18}$N Grown on GaN

(2011) Roy B. Chung et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Growth study and impurity characterization of AlxIn1−xN grown by metal organic chemical vapor deposition

(2011) Roy B. Chung et al.   JOURNAL OF CRYSTAL GROWTH

Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer

(2010) Suk Choi et al.   APPLIED PHYSICS LETTERS

Small valence-band offset of In0.17Al0.83N/GaN heterostructure grown by metal-organic vapor phase epitaxy

(2010) M. Akazawa et al.   APPLIED PHYSICS LETTERS

Defect-related tunneling mechanism of efficiency droop in III-nitride light-emitting diodes

(2010) N. I. Bochkareva et al.   APPLIED PHYSICS LETTERS

Droop in InGaN light-emitting diodes: A differential carrier lifetime analysis

(2010) Aurélien David et al.   APPLIED PHYSICS LETTERS

Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes

(2010) J. Hader et al.   APPLIED PHYSICS LETTERS

Efficiency droop in nitride-based light-emitting diodes

(2010) Joachim Piprek   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Measurement of electron overflow in 450 nm InGaN light-emitting diode structures

(2009) Kenneth J. Vampola et al.   APPLIED PHYSICS LETTERS

Direct measurement of auger recombination in In0.1Ga0.9N/GaN quantum wells and its impact on the efficiency of In0.1Ga0.9N/GaN multiple quantum well light emitting diodes

(2009) M. Zhang et al.   APPLIED PHYSICS LETTERS

On the importance of radiative and Auger losses in GaN-based quantum wells

(2008) J. Hader et al.   APPLIED PHYSICS LETTERS

Polarization-matched GaInN∕AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop

(2008) Martin F. Schubert et al.   APPLIED PHYSICS LETTERS