Numerical analysis of indirect Auger transitions in InGaN

Experimental determination of current spill-over and its effect on the efficiency droop in InGaN/GaN blue-light-emitting-diodes

(2012) Byung-Jun Ahn et al.   APPLIED PHYSICS LETTERS

Suppression of electron overflow and efficiency droop in N-polar GaN green light emitting diodes

(2012) F. Akyol et al.   APPLIED PHYSICS LETTERS

Temperature-dependence of the internal efficiency droop in GaN-based diodes

(2011) J. Hader et al.   APPLIED PHYSICS LETTERS

Determination of internal parameters for AlGaN-cladding-free m-plane InGaN/GaN laser diodes

(2011) R. M. Farrell et al.   APPLIED PHYSICS LETTERS

Optoelectronic behaviors and carrier dynamics of individual localized luminescent centers in InGaN quantum-well light emitting diodes

(2011) Suman De et al.   APPLIED PHYSICS LETTERS

Asymmetry of carrier transport leading to efficiency droop in GaInN based light-emitting diodes

(2011) David S. Meyaard et al.   APPLIED PHYSICS LETTERS

Auger recombination in GaInN/GaN quantum well laser structures

(2011) M. Brendel et al.   APPLIED PHYSICS LETTERS

Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes

(2011) Emmanouil Kioupakis et al.   APPLIED PHYSICS LETTERS

On the temperature dependence of electron leakage from the active region of GaInN/GaN light-emitting diodes

(2011) David S. Meyaard et al.   APPLIED PHYSICS LETTERS

GaN Avalanche Photodectors: A Full Band Monte Carlo Study of Gain, Noise and Bandwidth

(2011) Michele Moresco et al.   IEEE JOURNAL OF QUANTUM ELECTRONICS

Auger recombination rates in ZnMgO from first principles

(2011) Markus Heinemann et al.   JOURNAL OF APPLIED PHYSICS

Recombination coefficients of GaN-based laser diodes

(2011) W. G. Scheibenzuber et al.   JOURNAL OF APPLIED PHYSICS

An Explanation of Efficiency Droop in InGaN-based Light Emitting Diodes: Saturated Radiative Recombination Rate at Randomly Distributed In-Rich Active Areas

(2011) Jong-In Shim et al.   JOURNAL OF THE KOREAN PHYSICAL SOCIETY

Modeling excitation-dependent bandstructure effects on InGaN light-emitting diode efficiency

(2011) Weng W. Chow   OPTICS EXPRESS

Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells

(2011) Hongping Zhao et al.   OPTICS EXPRESS

A numerical study of Auger recombination in bulk InGaN

(2010) Francesco Bertazzi et al.   APPLIED PHYSICS LETTERS

Internal efficiency of InGaN light-emitting diodes: Beyond a quasiequilibrium model

(2010) W. W. Chow et al.   APPLIED PHYSICS LETTERS

Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes

(2010) J. Hader et al.   APPLIED PHYSICS LETTERS

Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes

(2010) Qi Dai et al.   APPLIED PHYSICS LETTERS

Efficiency droop in nitride-based light-emitting diodes

(2010) Joachim Piprek   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Pivotal role of ballistic and quasi-ballistic electrons on LED efficiency

(2010) X. Ni et al.   SUPERLATTICES AND MICROSTRUCTURES

Auger recombination rates in nitrides from first principles

(2009) Kris T. Delaney et al.   APPLIED PHYSICS LETTERS

Theory of high field carrier transport and impact ionization in wurtzite GaN. Part II: Application to avalanche photodetectors

(2009) Michele Moresco et al.   JOURNAL OF APPLIED PHYSICS

Theory of high field carrier transport and impact ionization in wurtzite GaN. Part I: A full band Monte Carlo model

(2009) Francesco Bertazzi et al.   JOURNAL OF APPLIED PHYSICS