Temperature dependent efficiency droop in GaInN light-emitting diodes with different current densities

Temperature-dependence of the internal efficiency droop in GaN-based diodes

(2011) J. Hader et al.   APPLIED PHYSICS LETTERS

Asymmetry of carrier transport leading to efficiency droop in GaInN based light-emitting diodes

(2011) David S. Meyaard et al.   APPLIED PHYSICS LETTERS

On the temperature dependence of electron leakage from the active region of GaInN/GaN light-emitting diodes

(2011) David S. Meyaard et al.   APPLIED PHYSICS LETTERS

Temperature-dependent light-output characteristics of GaInN light-emitting diodes with different dislocation densities

(2011) Sameer Chhajed et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes

(2010) J. Hader et al.   APPLIED PHYSICS LETTERS

Investigation of the Nonthermal Mechanism of Efficiency Rolloff in InGaN Light-Emitting Diodes

(2008) Yi Yang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES