Advantages of InGaN light-emitting diodes with GaN-InGaN-GaN barriers

The effect of trimethylgallium flows in the AlInGaN barrier on optoelectronic characteristics of near ultraviolet light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxy

(2011) Yi-Keng Fu et al.   APPLIED PHYSICS LETTERS

Improved Performance of an InGaN-Based Light-Emitting Diode With a p-GaN/n-GaN Barrier Junction

(2011) Yi-Jung Liu et al.   IEEE JOURNAL OF QUANTUM ELECTRONICS

Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells

(2011) Hongping Zhao et al.   OPTICS EXPRESS

Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer

(2010) Suk Choi et al.   APPLIED PHYSICS LETTERS

Analysis of InGaN-delta-InN quantum wells for light-emitting diodes

(2010) Hongping Zhao et al.   APPLIED PHYSICS LETTERS

Enhanced Output Power of InGaN-Based Light-Emitting Diodes With AlGaN/GaN Two-Dimensional Electron Gas Structure

(2010) Jae-Hoon Lee et al.   IEEE ELECTRON DEVICE LETTERS

Effect of P-Type Last Barrier on Efficiency Droop of Blue InGaN Light-Emitting Diodes

(2010) Yen-Kuang Kuo et al.   IEEE JOURNAL OF QUANTUM ELECTRONICS

Improvement in output power of a 460 nm InGaN light-emitting diode using staggered quantum well

(2010) Chih-Teng Liao et al.   JOURNAL OF APPLIED PHYSICS

Optical gain characteristics of staggered InGaN quantum wells lasers

(2010) Hongping Zhao et al.   JOURNAL OF APPLIED PHYSICS

Natural white light

(2010) Noriaki Horiuchi   Nature Photonics

Effect of normal and reversed polarizations on optical characteristics of ultraviolet-violet InGaN laser diodes

(2010) Yen-Kuang Kuo et al.   OPTICS COMMUNICATIONS

Enhancement in hole-injection efficiency of blue InGaN light-emitting diodes from reduced polarization by some specific designs for the electron blocking layer

(2010) Yen-Kuang Kuo et al.   OPTICS LETTERS

Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes

(2010) Hongping Zhao et al.   SOLID-STATE ELECTRONICS

Advantages of blue InGaN multiple-quantum well light-emitting diodes with InGaN barriers

(2009) Yen-Kuang Kuo et al.   APPLIED PHYSICS LETTERS

Enhancement of Light Power for Blue InGaN LEDs by Using Low-Indium-Content InGaN Barriers

(2009) Yen-Kuang Kuo et al.   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

Prospects for LED lighting

(2009) Siddha Pimputkar et al.   Nature Photonics