Optimal number of quantum wells for blue InGaN/GaN light-emitting diodes

Advantages of blue InGaN light-emitting diodes with InGaN-AlGaN-InGaN barriers

(2012) Yen-Kuang Kuo et al.   APPLIED PHYSICS LETTERS

Droop improvement in blue InGaN/GaN multiple quantum well light-emitting diodes with indium graded last barrier

(2011) Chang Sheng Xia et al.   APPLIED PHYSICS LETTERS

Hole transport improvement in InGaN/GaN light-emitting diodes by graded-composition multiple quantum barriers

(2011) C. H. Wang et al.   APPLIED PHYSICS LETTERS

Droop improvement in high current range on PSS-LEDs

(2011) S. Tanaka et al.   ELECTRONICS LETTERS

Improvement of Performance in p-Side Down InGaN/GaN Light-Emitting Diodes with Graded Electron Blocking Layer

(2011) Zhiqiang Li et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Simulation of quantum cascade lasers

(2011) Z.-M. Simon Li et al.   JOURNAL OF APPLIED PHYSICS

Electron leakage effects on GaN-based light-emitting diodes

(2011) Joachim Piprek et al.   OPTICAL AND QUANTUM ELECTRONICS

Efficiency droop in 245–247 nm AlGaN light-emitting diodes with continuous wave 2 mW output power

(2010) W. Sun et al.   APPLIED PHYSICS LETTERS

Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer

(2010) C. H. Wang et al.   APPLIED PHYSICS LETTERS

Numerical Study of Blue InGaN Light-Emitting Diodes With Varied Barrier Thicknesses

(2010) Miao-Chan Tsai et al.   IEEE PHOTONICS TECHNOLOGY LETTERS

On the importance of radiative and Auger losses in GaN-based quantum wells

(2008) J. Hader et al.   APPLIED PHYSICS LETTERS