An Overview of Ferroelectric Hafnia and Epitaxial Growth

Impact of vacancies and impurities on ferroelectricity in PVD- and ALD-grown HfO2 films

(2021) Lutz Baumgarten et al.   APPLIED PHYSICS LETTERS

Ferroelectric Properties and Polarization Fatigue of La:HfO 2 Thin‐Film Capacitors

(2021) Xiaofei Li et al.   Physica Status Solidi-Rapid Research Letters

Thickness- and orientation- dependences of Curie temperature in ferroelectric epitaxial Y doped HfO2 films

(2020) Takanori Mimura et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Physical chemistry of the TiN/Hf0.5Zr0.5O2 interface

(2020) W. Hamouda et al.   JOURNAL OF APPLIED PHYSICS

Domain-Matching Epitaxy of Ferroelectric Hf0.5Zr0.5O2(111) on La2/3Sr1/3MnO3(001)

(2020) Saul Estandía et al.   CRYSTAL GROWTH & DESIGN

Enhanced ferroelectricity in ultrathin films grown directly on silicon

(2020) Suraj S. Cheema et al.   NATURE

Blocking of Conducting Channels Widens Window for Ferroelectric Resistive Switching in Interface‐Engineered Hf 0.5 Zr 0.5 O 2 Tunnel Devices

(2020) Milena Cervo Sulzbach et al.   ADVANCED FUNCTIONAL MATERIALS

Toward Intrinsic Ferroelectric Switching in Multiferroic BiFeO3

(2020) Eric Parsonnet et al.   PHYSICAL REVIEW LETTERS

Scale-free ferroelectricity induced by flat phonon bands in HfO2

(2020) Hyun-Jae Lee et al.   SCIENCE

Reconfigurable frequency multiplication with a ferroelectric transistor

(2020) Halid Mulaosmanovic et al.   Nature Electronics

Defect Engineering to Achieve Wake‐up Free HfO 2 ‐Based Ferroelectrics

(2020) Alireza Kashir et al.   ADVANCED ENGINEERING MATERIALS

Fatigue and retention in the growth window of ferroelectric Hf0.5Zr0.5O2 thin films

(2020) Jike Lyu et al.   APPLIED PHYSICS LETTERS

Thermal evolution of ferroelectric behavior in epitaxial Hf0.5Zr0.5O2

(2020) J. W. Adkins et al.   APPLIED PHYSICS LETTERS

Local negative permittivity and topological phase transition in polar skyrmions

(2020) S. Das et al.   NATURE MATERIALS

What’s next for negative capacitance electronics?

(2020) Michael Hoffmann et al.   Nature Electronics

The future of ferroelectric field-effect transistor technology

(2020) Asif Islam Khan et al.   Nature Electronics

Guidelines for the stabilization of a polar rhombohedral phase in epitaxial Hf0.5Zr0.5O2 thin films

(2020) Pavan Nukala et al.   FERROELECTRICS

Origin of the retention loss in ferroelectric Hf0.5Zr0.5O2-based memory devices

(2020) Anastasia Chouprik et al.   ACTA MATERIALIA

Origin of Ferroelectricity in Epitaxial Si-Doped HfO2 Films

(2019) Tao Li et al.   ACS Applied Materials & Interfaces

Epitaxial Integration on Si(001) of Ferroelectric Hf0.5Zr0.5O2 Capacitors with High Retention and Endurance

(2019) Jike Lyu et al.   ACS Applied Materials & Interfaces

Mitigating wakeup effect and improving endurance of ferroelectric HfO2-ZrO2 thin films by careful La-doping

(2019) Maxim G. Kozodaev et al.   JOURNAL OF APPLIED PHYSICS

Next-generation ferroelectric domain-wall memories: principle and architecture

(2019) An Quan Jiang et al.   NPG Asia Materials

Energy-Efficient Organic Ferroelectric Tunnel Junction Memristors for Neuromorphic Computing

(2019) Sayani Majumdar et al.   Advanced Electronic Materials

Ferroelectric Analog Synaptic Transistors

(2019) Min-Kyu Kim et al.   NANO LETTERS

Very large remanent polarization in ferroelectric Hf1-xZrxO2 grown on Ge substrates by plasma assisted atomic oxygen deposition

(2019) C. Zacharaki et al.   APPLIED PHYSICS LETTERS

TiNx/Hf0.5Zr0.5O2/TiNx ferroelectric memory with tunable transparency and suppressed wake-up effect

(2019) Yuxing Li et al.   APPLIED PHYSICS LETTERS

Conformational Domain Wall Switch

(2019) Pankaj Sharma et al.   ADVANCED FUNCTIONAL MATERIALS

Composition-Dependent Ferroelectric Properties in Sputtered HfXZr1−XO2 Thin Films

(2019) Qing Luo et al.   IEEE ELECTRON DEVICE LETTERS

The effects of annealing and wake-up cycling on the ferroelectricity of zirconium hafnium oxide ultrathin films prepared by remote plasma atomic layer deposition

(2019) Tzu-Yao Hsu et al.   Smart Materials and Structures

Effects of growth orientations and epitaxial strains on phase stability of HfO2 thin films

(2019) Shi Liu et al.   PHYSICAL REVIEW MATERIALS

Formation of the orthorhombic phase in CeO2-HfO2 solid solution epitaxial thin films and their ferroelectric properties

(2019) T. Shiraishi et al.   APPLIED PHYSICS LETTERS

Enhanced ferroelectricity in epitaxial Hf0.5Zr0.5O2 thin films integrated with Si(001) using SrTiO3 templates

(2019) J. Lyu et al.   APPLIED PHYSICS LETTERS

Origin of Ferroelectric Phase in Undoped HfO 2 Films Deposited by Sputtering

(2019) Terence Mittmann et al.   Advanced Materials Interfaces

On the Origin of the Large Remanent Polarization in La:HfO 2

(2019) Tony Schenk et al.   Advanced Electronic Materials

Recent progress for obtaining the ferroelectric phase in hafnium oxide based films: impact of oxygen and zirconium

(2019) Uwe Schroeder et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Energy storage: The future enabled by nanomaterials

(2019) Ekaterina Pomerantseva et al.   SCIENCE

Unraveling Ferroelectric Polarization and Ionic Contributions to Electroresistance in Epitaxial Hf 0.5 Zr 0.5 O 2 Tunnel Junctions

(2019) Milena Cervo Sulzbach et al.   Advanced Electronic Materials

Ferroelectricity in epitaxial Y-doped HfO2 thin film integrated on Si substrate

(2018) K. Lee et al.   APPLIED PHYSICS LETTERS

Comparative Study of Reliability of Ferroelectric and Anti-Ferroelectric Memories

(2018) Milan Pesic et al.   IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

Polarization switching behavior of Hf–Zr–O ferroelectric ultrathin films studied through coercive field characteristics

(2018) Shinji Migita et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors

(2018) Thomas Mikolajick et al.   MRS BULLETIN

Controllable conductive readout in self-assembled, topologically confined ferroelectric domain walls

(2018) Ji Ma et al.   Nature Nanotechnology

Neuromorphic computing with multi-memristive synapses

(2018) Irem Boybat et al.   Nature Communications

Robust ferroelectricity in epitaxial Hf1/2Zr1/2O2 thin films

(2018) J. Lyu et al.   APPLIED PHYSICS LETTERS

Thickness-dependent crystal structure and electric properties of epitaxial ferroelectric Y2O3-HfO2 films

(2018) Takanori Mimura et al.   APPLIED PHYSICS LETTERS

Fabrication of ferroelectric Fe doped HfO2 epitaxial thin films by ion-beam sputtering method and their characterization

(2018) Takahisa Shiraishi et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Ferroelectric Hf0.5Zr0.5O2 Thin Films: A Review of Recent Advances

(2018) Si Joon Kim et al.   JOM

Review and perspective on ferroelectric HfO2-based thin films for memory applications

(2018) Min Hyuk Park et al.   MRS Communications

Epitaxial ferroelectric Hf0.5Zr0.5O2 thin film on a buffered YSZ substrate through interface reaction

(2018) Tao Li et al.   Journal of Materials Chemistry C

Morphotropic Phase Boundary of Hf1–xZrxO2 Thin Films for Dynamic Random Access Memories

(2018) Min Hyuk Park et al.   ACS Applied Materials & Interfaces

Epitaxial Ferroelectric Hf 0.5 Zr 0.5 O 2 Thin Films and Their Implementations in Memristors for Brain‐Inspired Computing

(2018) Herng Yau Yoong et al.   ADVANCED FUNCTIONAL MATERIALS

Ferroelectricity mediated by ferroelastic domain switching in HfO2-based epitaxial thin films

(2018) Takao Shimizu et al.   APPLIED PHYSICS LETTERS

Epitaxial ferroelectric Y-doped HfO2 film grown by the RF magnetron sputtering

(2018) Taisei Suzuki et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

A rhombohedral ferroelectric phase in epitaxially strained Hf0.5Zr0.5O2 thin films

(2018) Yingfen Wei et al.   NATURE MATERIALS

Reliability Study of Ferroelectric Al:HfO2 Thin Films for DRAM and NAND Applications

(2017) Karine Florent et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Understanding ferroelectric Al:HfO2 thin films with Si-based electrodes for 3D applications

(2017) K. Florent et al.   JOURNAL OF APPLIED PHYSICS

Size driven thermodynamic crossovers in phase stability in zirconia and hafnia

(2017) Geetu Sharma et al.   JOURNAL OF THE AMERICAN CERAMIC SOCIETY

Preparation and characterization of ferroelectric Hf0.5Zr0.5O2 thin films grown by reactive sputtering

(2017) Young Hwan Lee et al.   NANOTECHNOLOGY

Resonant electron tunnelling assisted by charged domain walls in multiferroic tunnel junctions

(2017) Gabriel Sanchez-Santolino et al.   Nature Nanotechnology

Understanding the formation of the metastable ferroelectric phase in hafnia–zirconia solid solution thin films

(2017) Min Hyuk Park et al.   Nanoscale

Effect of Zr Content on the Wake-Up Effect in Hf1–xZrxO2 Films

(2016) Min Hyuk Park et al.   ACS Applied Materials & Interfaces

Physical Mechanisms behind the Field-Cycling Behavior of HfO2 -Based Ferroelectric Capacitors

(2016) Milan Pešić et al.   ADVANCED FUNCTIONAL MATERIALS

Domain Wall Architecture in Tetragonal Ferroelectric Thin Films

(2016) Gabriele De Luca et al.   ADVANCED MATERIALS

Growth of (111)-oriented epitaxial and textured ferroelectric Y-doped HfO2 films for downscaled devices

(2016) Kiliha Katayama et al.   APPLIED PHYSICS LETTERS

Impact of mechanical stress on ferroelectricity in (Hf0.5Zr0.5)O2 thin films

(2016) Takahisa Shiraishi et al.   APPLIED PHYSICS LETTERS

Orientation control and domain structure analysis of {100}-oriented epitaxial ferroelectric orthorhombic HfO2-based thin films

(2016) Kiliha Katayama et al.   JOURNAL OF APPLIED PHYSICS

A study on the wake-up effect of ferroelectric Hf0.5Zr0.5O2films by pulse-switching measurement

(2016) Han Joon Kim et al.   Nanoscale

The demonstration of significant ferroelectricity in epitaxial Y-doped HfO2 film

(2016) Takao Shimizu et al.   Scientific Reports

Coupling and competition between ferroelectricity, magnetism, strain, and oxygen vacancies in AMnO3 perovskites

(2016) Astrid Marthinsen et al.   MRS Communications

Structural Changes Underlying Field-Cycling Phenomena in Ferroelectric HfO2Thin Films

(2016) Everett D. Grimley et al.   Advanced Electronic Materials

Ferroelectricity and Antiferroelectricity of Doped Thin HfO2-Based Films

(2015) Min Hyuk Park et al.   ADVANCED MATERIALS

Growth of epitaxial orthorhombic YO1.5-substituted HfO2 thin film

(2015) Takao Shimizu et al.   APPLIED PHYSICS LETTERS

Suppressed polar distortion with enhanced Curie temperature in in-plane 90°-domain structure of a-axis oriented PbTiO3 Film

(2015) Hitoshi Morioka et al.   APPLIED PHYSICS LETTERS

Study on the size effect in Hf0.5Zr0.5O2 films thinner than 8 nm before and after wake-up field cycling

(2015) Min Hyuk Park et al.   APPLIED PHYSICS LETTERS

The origin of ferroelectricity in Hf1−xZrxO2: A computational investigation and a surface energy model

(2015) R. Materlik et al.   JOURNAL OF APPLIED PHYSICS

TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films

(2015) Patrick D. Lomenzo et al.   JOURNAL OF APPLIED PHYSICS

Chemical Solution Deposition of Ferroelectric Hafnium Oxide for Future Lead Free Ferroelectric Devices

(2015) Sergej Starschich et al.   ECS Journal of Solid State Science and Technology

The effects of crystallographic orientation and strain of thin Hf0.5Zr0.5O2 film on its ferroelectricity

(2014) Min Hyuk Park et al.   APPLIED PHYSICS LETTERS

Study on the effect of heat treatment conditions on metalorganic-chemical-vapor-deposited ferroelectric Hf0.5Zr0.5O2thin film on Ir electrode

(2014) Takao Shimizu et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Impact of different dopants on the switching properties of ferroelectric hafniumoxide

(2014) Uwe Schroeder et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Pathways towards ferroelectricity in hafnia

(2014) Tran Doan Huan et al.   PHYSICAL REVIEW B

Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature

(2013) Min Hyuk Park et al.   APPLIED PHYSICS LETTERS

Enhanced tunnelling electroresistance effect due to a ferroelectrically induced phase transition at a magnetic complex oxide interface

(2013) Y. W. Yin et al.   NATURE MATERIALS

Ferroelectric-field-effect-enhanced electroresistance in metal/ferroelectric/semiconductor tunnel junctions

(2013) Zheng Wen et al.   NATURE MATERIALS

Incipient Ferroelectricity in Al-Doped HfO2 Thin Films

(2012) Stefan Mueller et al.   ADVANCED FUNCTIONAL MATERIALS

Thin-film piezoelectric MEMS

(2012) Chang-Beom Eom et al.   MRS BULLETIN

Ferroelectricity in Simple Binary ZrO2 and HfO2

(2012) Johannes Müller et al.   NANO LETTERS

Impact of layer thickness on the ferroelectric behaviour of silicon doped hafnium oxide thin films

(2012) Ekaterina Yurchuk et al.   THIN SOLID FILMS

Phase transitions in ferroelectric silicon doped hafnium oxide

(2011) T. S. Böscke et al.   APPLIED PHYSICS LETTERS

Spontaneous polarization estimation from the soft mode in strain-free epitaxial polar axis-oriented Pb(Zr,Ti)O3 thick films with tetragonal symmetry

(2011) Yoshitaka Ehara et al.   APPLIED PHYSICS LETTERS

Ferroelectricity in hafnium oxide thin films

(2011) T. S. Böscke et al.   APPLIED PHYSICS LETTERS

Ferroelectricity in yttrium-doped hafnium oxide

(2011) J. Müller et al.   JOURNAL OF APPLIED PHYSICS

Thermal expansion of EB-PVD yttria stabilized zirconia

(2010) R. Ochrombel et al.   JOURNAL OF THE EUROPEAN CERAMIC SOCIETY

Polarization Control of Electron Tunneling into Ferroelectric Surfaces

(2009) P. Maksymovych et al.   SCIENCE

Dynamics of ferroelectric nanodomains in BaTiO3epitaxial thin films via piezoresponse force microscopy

(2008) N A Pertsev et al.   NANOTECHNOLOGY