Impact of area scaling on the ferroelectric properties of back-end of line compatible Hf0.5Zr0.5O2 and Si:HfO2-based MFM capacitors

Ultrafast measurements of polarization switching dynamics on ferroelectric and anti-ferroelectric hafnium zirconium oxide

(2019) Mengwei Si et al.   APPLIED PHYSICS LETTERS

On the Origin of the Large Remanent Polarization in La:HfO 2

(2019) Tony Schenk et al.   Advanced Electronic Materials

Demonstration of High Ferroelectricity (P$_r$ ~ 29 $\mu$ C/cm2) in Zr Rich HfxZr1–xO2 Films

(2019) Dipjyoti Das et al.   IEEE ELECTRON DEVICE LETTERS

Improved Ferroelectric Switching Endurance of La-Doped Hf0.5Zr0.5O2 Thin Films

(2018) Anna G. Chernikova et al.   ACS Applied Materials & Interfaces

Nucleation limited switching (NLS) model for HfO2-based metal-ferroelectric-metal (MFM) capacitors: Switching kinetics and retention characteristics

(2018) N. Gong et al.   APPLIED PHYSICS LETTERS

Review and perspective on ferroelectric HfO2-based thin films for memory applications

(2018) Min Hyuk Park et al.   MRS Communications

Surface and grain boundary energy as the key enabler of ferroelectricity in nanoscale hafnia-zirconia: a comparison of model and experiment

(2017) Min Hyuk Park et al.   Nanoscale

Impact of mechanical stress on ferroelectricity in (Hf0.5Zr0.5)O2 thin films

(2016) Takahisa Shiraishi et al.   APPLIED PHYSICS LETTERS

Ferroelectricity and Antiferroelectricity of Doped Thin HfO2-Based Films

(2015) Min Hyuk Park et al.   ADVANCED MATERIALS

The origin of ferroelectricity in Hf1−xZrxO2: A computational investigation and a surface energy model

(2015) R. Materlik et al.   JOURNAL OF APPLIED PHYSICS

Identification of the ferroelectric switching process and dopant-dependent switching properties in orthorhombic HfO2: A first principles insight

(2014) S. Clima et al.   APPLIED PHYSICS LETTERS

Impact of different dopants on the switching properties of ferroelectric hafniumoxide

(2014) Uwe Schroeder et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Pathways towards ferroelectricity in hafnia

(2014) Tran Doan Huan et al.   PHYSICAL REVIEW B

Reliability Characteristics of Ferroelectric $ \hbox{Si:HfO}_{2}$ Thin Films for Memory Applications

(2012) Stefan Mueller et al.   IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

Ferroelectricity in hafnium oxide thin films

(2011) T. S. Böscke et al.   APPLIED PHYSICS LETTERS

Nonferroelectric contributions to the hysteresis cycles in manganite thin films: A comparative study of measurement techniques

(2011) I. Fina et al.   JOURNAL OF APPLIED PHYSICS

On Voltage Acceleration Models of Time to Breakdown—Part I: Experimental and Analysis Methodologies

(2009) Ernest Y. Wu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES