Effect of dead layers on the ferroelectric property of ultrathin HfZrOx film

Effect of Forming Gas High-Pressure Annealing on Metal-Ferroelectric-Semiconductor Hafnia Ferroelectric Tunnel Junction

(2020) Junghyeon Hwang et al.   IEEE ELECTRON DEVICE LETTERS

Defect Engineering to Achieve Wake‐up Free HfO 2 ‐Based Ferroelectrics

(2020) Alireza Kashir et al.   ADVANCED ENGINEERING MATERIALS

Improved Ferroelectric Switching in Sputtered HfZrOx Device Enabled by High Pressure Annealing

(2019) Jiyong Woo et al.   IEEE ELECTRON DEVICE LETTERS

Evolution of ferroelectric HfO2 in ultrathin region down to 3 nm

(2018) Xuan Tian et al.   APPLIED PHYSICS LETTERS

Physical Mechanisms behind the Field-Cycling Behavior of HfO2 -Based Ferroelectric Capacitors

(2016) Milan Pešić et al.   ADVANCED FUNCTIONAL MATERIALS

A study on the wake-up effect of ferroelectric Hf0.5Zr0.5O2films by pulse-switching measurement

(2016) Han Joon Kim et al.   Nanoscale

State of the art of metal oxide memristor devices

(2016) Baker Mohammad et al.   Nanotechnology Reviews

About the deformation of ferroelectric hystereses

(2014) T. Schenk et al.   Applied Physics Reviews

Wake-up effects in Si-doped hafnium oxide ferroelectric thin films

(2013) Dayu Zhou et al.   APPLIED PHYSICS LETTERS

Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature

(2013) Min Hyuk Park et al.   APPLIED PHYSICS LETTERS

Sub-Picosecond Processes of Ferroelectric Domain Switching from Field and Temperature Experiments

(2011) An Quan Jiang et al.   ADVANCED FUNCTIONAL MATERIALS

Ferroelectricity in hafnium oxide thin films

(2011) T. S. Böscke et al.   APPLIED PHYSICS LETTERS

Dynamics of polarization reversal in virgin and fatigued ferroelectric ceramics by inhomogeneous field mechanism

(2010) Sergey Zhukov et al.   PHYSICAL REVIEW B