Schottky barrier heights in two-dimensional field-effect transistors: from theory to experiment

Schottky barriers, emission regimes and contact resistances in 2H-1T' MoS2 lateral metal-semiconductor junctions from first-principles

(2020) Laura Urquiza et al.   2D Materials

Phase Transition in Two-dimensional Tellurene under Mechanical Strain Modulation

(2019) Yuan Xiang et al.   Nano Energy

Thermoelectric Performance of 2D Tellurium with Accumulation Contacts

(2019) Gang Qiu et al.   NANO LETTERS

Theoretical Study on the Interfacial Properties of Monolayer TiS3–Metal Contacts for Electronic Device Applications

(2019) Rui Sun et al.   Journal of Physical Chemistry C

Pervasive Ohmic Contacts in Bilayer Bi2O2Se–Metal Interfaces

(2019) Lianqiang Xu et al.   Journal of Physical Chemistry C

Strong Charge Transfer at 2H–1T Phase Boundary of MoS 2 for Superb High‐Performance Energy Storage

(2019) Qingqing Ke et al.   Small

Dynamically controllable polarity modulation of MoTe2 field-effect transistors through ultraviolet light and electrostatic activation

(2019) Enxiu Wu et al.   Science Advances

Immunity to Contact Scaling in MoS2 Transistors Using in Situ Edge Contacts

(2019) Zhihui Cheng et al.   NANO LETTERS

Anisotropic Interfacial Properties of Monolayer GeSe - Metal Contacts

(2019) Ying Guo et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Interfacial Properties of Monolayer Antimonene Devices

(2019) Han Zhang et al.   Physical Review Applied

Planar Direction‐Dependent Interfacial Properties in Monolayer In 2 Se 3 –Metal Contacts

(2019) Chen Yang et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Improving Performances of In-Plane Transition-Metal Dichalcogenide Schottky Barrier Field-Effect Transistors

(2018) Zhi-Qiang Fan et al.   ACS Applied Materials & Interfaces

Many-Body Effect and Device Performance Limit of Monolayer InSe

(2018) Yangyang Wang et al.   ACS Applied Materials & Interfaces

Solution-Synthesized High-Mobility Tellurium Nanoflakes for Short-Wave Infrared Photodetectors

(2018) Matin Amani et al.   ACS Nano

Multidirection Piezoelectricity in Mono- and Multilayered Hexagonal α-In2Se3

(2018) Fei Xue et al.   ACS Nano

Impact of Thickness on Contact Issues for Pinning Effect in Black Phosphorus Field-Effect Transistors

(2018) Bei Jiang et al.   ADVANCED FUNCTIONAL MATERIALS

High-Mobility Helical Tellurium Field-Effect Transistors Enabled by Transfer-Free, Low-Temperature Direct Growth

(2018) Guanyu Zhou et al.   ADVANCED MATERIALS

Ohmic contacts between monolayer WSe 2 and two-dimensional titanium carbides

(2018) Qiuhui Li et al.   CARBON

Interfacial Properties of Monolayer SnS–Metal Contacts

(2018) Sibai Li et al.   Journal of Physical Chemistry C

Epitaxial Growth of Flat Antimonene Monolayer: A New Honeycomb Analogue of Graphene

(2018) Yan Shao et al.   NANO LETTERS

Intercorrelated In-Plane and Out-of-Plane Ferroelectricity in Ultrathin Two-Dimensional Layered Semiconductor In2Se3

(2018) Chaojie Cui et al.   NANO LETTERS

Electrical contacts in monolayer blue phosphorene devices

(2018) Jingzhen Li et al.   Nano Research

InSe: a two-dimensional material with strong interlayer coupling

(2018) Yuanhui Sun et al.   Nanoscale

Approaching the Schottky–Mott limit in van der Waals metal–semiconductor junctions

(2018) Yuan Liu et al.   NATURE

Producing air-stable InSe nanosheet through mild oxygen plasma treatment

(2018) Haiyan Nan et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Interfacial properties of black phosphorus/transition metal carbide van der Waals heterostructures

(2018) Hao Yuan et al.   Frontiers of Physics

Monolayer tellurene–metal contacts

(2018) Jiahuan Yan et al.   Journal of Materials Chemistry C

Selecting electrode materials for monolayer ReS2 with an Ohmic contact

(2018) Nan Gao et al.   Journal of Materials Chemistry C

Gate-tunable interfacial properties of in-plane ML MX2 1T′–2H heterojunctions

(2018) Shiqi Liu et al.   Journal of Materials Chemistry C

Two-dimensional III 2 -VI 3 materials: Promising photocatalysts for overall water splitting under infrared light spectrum

(2018) Pei Zhao et al.   Nano Energy

Highly Anisotropic GeSe Nanosheets for Phototransistors with Ultrahigh Photoresponsivity

(2018) Xing Zhou et al.   Advanced Science

Few-layer Tellurium: one-dimensional-like layered elementary semiconductor with striking physical properties

(2018) Jingsi Qiao et al.   Science Bulletin

Thickness-Dependent Carrier Transport Characteristics of a New 2D Elemental Semiconductor: Black Arsenic

(2018) Mianzeng Zhong et al.   ADVANCED FUNCTIONAL MATERIALS

Two-dimensional transistors beyond graphene and TMDCs

(2018) Yuan Liu et al.   CHEMICAL SOCIETY REVIEWS

Tellurene: its physical properties, scalable nanomanufacturing, and device applications

(2018) Wenzhuo Wu et al.   CHEMICAL SOCIETY REVIEWS

2-D Layered Materials for Next-Generation Electronics: Opportunities and Challenges

(2018) Wei Cao et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

High-performance and flexible photodetectors based on chemical vapor deposition grown two-dimensional In2Se3 nanosheets

(2018) Wei Feng et al.   NANOTECHNOLOGY

n-Type Ohmic contact and p-type Schottky contact of monolayer InSe transistors

(2018) Bowen Shi et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Tuning Schottky barriers for monolayer GaSe FETs by exploiting a weak Fermi level pinning effect

(2018) Nanshu Liu et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

n- and p-type ohmic contacts at monolayer gallium nitride–metal interfaces

(2018) Ying Guo et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Electronic structures and unusually robust bandgap in an ultrahigh-mobility layered oxide semiconductor, Bi2O2Se

(2018) Cheng Chen et al.   Science Advances

Epitaxial Synthesis of Blue Phosphorene

(2018) Wei Zhang et al.   Small

Vanishing Schottky Barriers in Blue Phosphorene/MXene Heterojunctions

(2017) Hefei Wang et al.   Journal of Physical Chemistry C

Low-Temperature Ohmic Contact to Monolayer MoS2 by van der Waals Bonded Co/h-BN Electrodes

(2017) Xu Cui et al.   NANO LETTERS

Large-Area CVD-Grown Sub-2 V ReS2 Transistors and Logic Gates

(2017) Ajjiporn Dathbun et al.   NANO LETTERS

Controlled Synthesis of High-Mobility Atomically Thin Bismuth Oxyselenide Crystals

(2017) Jinxiong Wu et al.   NANO LETTERS

Epitaxial Growth and Band Structure of Te Film on Graphene

(2017) Xiaochun Huang et al.   NANO LETTERS

Three-layer phosphorene-metal interfaces

(2017) Xiuying Zhang et al.   Nano Research

From the metal to the channel: a study of carrier injection through the metal/2D MoS2 interface

(2017) Goutham Arutchelvan et al.   Nanoscale

Black phosphorus transistors with van der Waals-type electrical contacts

(2017) Ruge Quhe et al.   Nanoscale

Orbitally driven low thermal conductivity of monolayer gallium nitride (GaN) with planar honeycomb structure: a comparative study

(2017) Zhenzhen Qin et al.   Nanoscale

Ultrathin β-tellurium layers grown on highly oriented pyrolytic graphite by molecular-beam epitaxy

(2017) Jinglei Chen et al.   Nanoscale

High electron mobility and quantum oscillations in non-encapsulated ultrathin semiconducting Bi2O2Se

(2017) Jinxiong Wu et al.   Nature Nanotechnology

Coplanar semiconductor–metal circuitry defined on few-layer MoTe2 via polymorphic heteroepitaxy

(2017) Ji Ho Sung et al.   Nature Nanotechnology

Interfacial properties of borophene contacts with two-dimensional semiconductors

(2017) Jie Yang et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

van der Waals heterostructures based on allotropes of phosphorene and MoSe2

(2017) Sumandeep Kaur et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Multivalency-Driven Formation of Te-Based Monolayer Materials: A Combined First-Principles and Experimental study

(2017) Zhili Zhu et al.   PHYSICAL REVIEW LETTERS

Bismuthene on a SiC substrate: A candidate for a high-temperature quantum spin Hall material

(2017) F. Reis et al.   SCIENCE

Prediction of intrinsic two-dimensional ferroelectrics in In2Se3 and other III2-VI3 van der Waals materials

(2017) Wenjun Ding et al.   Nature Communications

Investigation of Physical and Electronic Properties of GeSe for Photovoltaic Applications

(2017) Shun-Chang Liu et al.   Advanced Electronic Materials

Band structure, band offsets, substitutional doping, and Schottky barriers of bulk and monolayer InSe

(2017) Yuzheng Guo et al.   PHYSICAL REVIEW MATERIALS

Surface Charge Transfer Doping of Low-Dimensional Nanostructures toward High-Performance Nanodevices

(2016) Xiujuan Zhang et al.   ADVANCED MATERIALS

High Mobility MoS2Transistor with Low Schottky Barrier Contact by Using Atomic Thick h-BN as a Tunneling Layer

(2016) Jingli Wang et al.   ADVANCED MATERIALS

Epitaxial Growth and Air-Stability of Monolayer Antimonene on PdTe2

(2016) Xu Wu et al.   ADVANCED MATERIALS

Mechanical Isolation of Highly Stable Antimonene under Ambient Conditions

(2016) Pablo Ares et al.   ADVANCED MATERIALS

P-Type Polar Transition of Chemically Doped Multilayer MoS2 Transistor

(2016) Xiaochi Liu et al.   ADVANCED MATERIALS

Few-Layer Antimonene by Liquid-Phase Exfoliation

(2016) Carlos Gibaja et al.   ANGEWANDTE CHEMIE-INTERNATIONAL EDITION

Sensitive Electronic-Skin Strain Sensor Array Based on the Patterned Two-Dimensional α-In2Se3

(2016) Wei Feng et al.   CHEMISTRY OF MATERIALS

Monolayer Phosphorene–Metal Contacts

(2016) Yuanyuan Pan et al.   CHEMISTRY OF MATERIALS

Tunable schottky barrier in blue phosphorus–graphene heterojunction with normal strain

(2016) Jiaduo Zhu et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Interfacial Properties of Monolayer MoSe2–Metal Contacts

(2016) Yuanyuan Pan et al.   Journal of Physical Chemistry C

Few-Layer Tin Sulfide: A New Black-Phosphorus-Analogue 2D Material with a Sizeable Band Gap, Odd–Even Quantum Confinement Effect, and High Carrier Mobility

(2016) Chao Xin et al.   Journal of Physical Chemistry C

Low-Resistance 2D/2D Ohmic Contacts: A Universal Approach to High-Performance WSe2, MoS2, and MoSe2 Transistors

(2016) Hsun-Jen Chuang et al.   NANO LETTERS

Gate-Tunable Atomically Thin Lateral MoS2 Schottky Junction Patterned by Electron Beam

(2016) Y. Katagiri et al.   NANO LETTERS

Epitaxial Growth of Single Layer Blue Phosphorus: A New Phase of Two-Dimensional Phosphorus

(2016) Jia Lin Zhang et al.   NANO LETTERS

Large-Area Dry Transfer of Single-Crystalline Epitaxial Bismuth Thin Films

(2016) Emily S. Walker et al.   NANO LETTERS

Band Alignment in MoS2/WS2 Transition Metal Dichalcogenide Heterostructures Probed by Scanning Tunneling Microscopy and Spectroscopy

(2016) Heather M. Hill et al.   NANO LETTERS

MoS2 Field-Effect Transistor with Sub-10 nm Channel Length

(2016) Amirhasan Nourbakhsh et al.   NANO LETTERS

Screening limited switching performance of multilayer 2D semiconductor FETs: the case for SnS

(2016) Sukrit Sucharitakul et al.   Nanoscale

Does p-type ohmic contact exist in WSe2–metal interfaces?

(2016) Yangyang Wang et al.   Nanoscale

Two-dimensional gallium nitride realized via graphene encapsulation

(2016) Zakaria Y. Al Balushi et al.   NATURE MATERIALS

High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe

(2016) Denis A. Bandurin et al.   Nature Nanotechnology

Giant gap quantum spin Hall effect and valley-polarized quantum anomalous Hall effect in cyanided bismuth bilayers

(2016) Wei-xiao Ji et al.   NEW JOURNAL OF PHYSICS

MoS2 transistors with 1-nanometer gate lengths

(2016) S. B. Desai et al.   SCIENCE

Structural semiconductor-to-semimetal phase transition in two-dimensional materials induced by electrostatic gating

(2016) Yao Li et al.   Nature Communications

MX (M = Ge, Sn; X = S, Se) sheets: theoretical prediction of new promising electrode materials for Li ion batteries

(2016) Yungang Zhou   Journal of Materials Chemistry A

A theoretical study of the electrical contact between metallic and semiconducting phases in monolayer MoS2

(2016) Wendel S Paz et al.   2D Materials

2D materials advances: from large scale synthesis and controlled heterostructures to improved characterization techniques, defects and applications

(2016) Zhong Lin et al.   2D Materials

Ohmic Contacts to 2D Semiconductors through van der Waals Bonding

(2016) Mojtaba Farmanbar et al.   Advanced Electronic Materials

Valleytronics in 2D materials

(2016) John R. Schaibley et al.   Nature Reviews Materials

Van der Waals metal-semiconductor junction: Weak Fermi level pinning enables effective tuning of Schottky barrier

(2016) Y. Liu et al.   Science Advances

Interfacial Properties of Monolayer and Bilayer MoS2 Contacts with Metals: Beyond the Energy Band Calculations

(2016) Hongxia Zhong et al.   Scientific Reports

Gate Modulation of Threshold Voltage Instability in Multilayer InSe Field Effect Transistors

(2015) Wei Feng et al.   ACS Applied Materials & Interfaces

3D Behavior of Schottky Barriers of 2D Transition-Metal Dichalcogenides

(2015) Yuzheng Guo et al.   ACS Applied Materials & Interfaces

Ultrashort Channel Length Black Phosphorus Field-Effect Transistors

(2015) Jinshui Miao et al.   ACS Nano

Air-Stable Transport in Graphene-Contacted, Fully Encapsulated Ultrathin Black Phosphorus-Based Field-Effect Transistors

(2015) Ahmet Avsar et al.   ACS Nano

High-Mobility Holes in Dual-Gated WSe2 Field-Effect Transistors

(2015) Hema C. P. Movva et al.   ACS Nano

Vacancy-Induced Formation and Growth of Inversion Domains in Transition-Metal Dichalcogenide Monolayer

(2015) Junhao Lin et al.   ACS Nano

Recent Advances in Two-Dimensional Materials beyond Graphene

(2015) Ganesh R. Bhimanapati et al.   ACS Nano

Atomically Thin Arsenene and Antimonene: Semimetal-Semiconductor and Indirect-Direct Band-Gap Transitions

(2015) Shengli Zhang et al.   ANGEWANDTE CHEMIE-INTERNATIONAL EDITION

Materials for Flexible, Stretchable Electronics: Graphene and 2D Materials

(2015) Sang Jin Kim et al.   Annual Review of Materials Research

Beyond Graphene: Progress in Novel Two-Dimensional Materials and van der Waals Solids

(2015) Saptarshi Das et al.   Annual Review of Materials Research

Manifestation of unexpected semiconducting properties in few-layer orthorhombic arsenene

(2015) Zhiya Zhang et al.   Applied Physics Express

Structural and Electronic Properties of Layered Arsenic and Antimony Arsenide

(2015) Liangzhi Kou et al.   Journal of Physical Chemistry C

Charge Mediated Semiconducting-to-Metallic Phase Transition in Molybdenum Disulfide Monolayer and Hydrogen Evolution Reaction in New 1T′ Phase

(2015) Guoping Gao et al.   Journal of Physical Chemistry C

Toward Barrier Free Contact to Molybdenum Disulfide Using Graphene Electrodes

(2015) Yuan Liu et al.   NANO LETTERS

An Atomically Layered InSe Avalanche Photodetector

(2015) Sidong Lei et al.   NANO LETTERS

Intrinsic Electron Mobility Exceeding 103 cm2/(V s) in Multilayer InSe FETs

(2015) Sukrit Sucharitakul et al.   NANO LETTERS

Probing the Dynamics of the Metallic-to-Semiconducting Structural Phase Transformation in MoS2 Crystals

(2015) Yinsheng Guo et al.   NANO LETTERS

Room Temperature Quantum Spin Hall Insulators with a Buckled Square Lattice

(2015) Wei Luo et al.   NANO LETTERS

Memristive Behavior and Ideal Memristor of 1T Phase MoS2 Nanosheets

(2015) Peifu Cheng et al.   NANO LETTERS

Electro-mechanical anisotropy of phosphorene

(2015) Luqing Wang et al.   Nanoscale

Electrical contacts to two-dimensional semiconductors

(2015) Adrien Allain et al.   NATURE MATERIALS

Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform

(2015) Xu Cui et al.   Nature Nanotechnology

Highly anisotropic and robust excitons in monolayer black phosphorus

(2015) Xiaomu Wang et al.   Nature Nanotechnology

The nontrivial electronic structure of Bi/Sb honeycombs on SiC(0001)

(2015) Chia-Hsiu Hsu et al.   NEW JOURNAL OF PHYSICS

Performance improvement of multilayer InSe transistors with optimized metal contacts

(2015) Wei Feng et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Arsenene: Two-dimensional buckled and puckered honeycomb arsenic systems

(2015) C. Kamal et al.   PHYSICAL REVIEW B

Carrier Plasmon Induced Nonlinear Band Gap Renormalization in Two-Dimensional Semiconductors

(2015) Yufeng Liang et al.   PHYSICAL REVIEW LETTERS

Phase patterning for ohmic homojunction contact in MoTe2

(2015) S. Cho et al.   SCIENCE

Low Schottky Barrier Black Phosphorus Field-Effect Devices with Ferromagnetic Tunnel Contacts

(2015) M. Venkata Kamalakar et al.   Small

High-performance n-type black phosphorus transistors with type control via thickness and contact-metal engineering

(2015) David J. Perello et al.   Nature Communications

Exploring atomic defects in molybdenum disulphide monolayers

(2015) Jinhua Hong et al.   Nature Communications

Surface transfer doping induced effective modulation on ambipolar characteristics of few-layer black phosphorus

(2015) Du Xiang et al.   Nature Communications

High-mobility and air-stable single-layer WS2 field-effect transistors sandwiched between chemical vapor deposition-grown hexagonal BN films

(2015) M Waqas Iqbal et al.   Scientific Reports

Optimizing Hybridization of 1T and 2H Phases in MoS2Monolayers to Improve Capacitances of Supercapacitors

(2015) Lianfu Jiang et al.   Materials Research Letters

Toward Low-Power Electronics: Tunneling Phenomena in Transition Metal Dichalcogenides

(2014) Saptarshi Das et al.   ACS Nano

Low Resistance Metal Contacts to MoS2 Devices with Nickel-Etched-Graphene Electrodes

(2014) Wei Sun Leong et al.   ACS Nano

Evolution of the Electronic Band Structure and Efficient Photo-Detection in Atomic Layers of InSe

(2014) Sidong Lei et al.   ACS Nano

Device Perspective for Black Phosphorus Field-Effect Transistors: Contact Resistance, Ambipolar Behavior, and Scaling

(2014) Yuchen Du et al.   ACS Nano

Mobility Improvement and Temperature Dependence in MoSe2 Field-Effect Transistors on Parylene-C Substrate

(2014) Bhim Chamlagain et al.   ACS Nano

Defect-Dominated Doping and Contact Resistance in MoS2

(2014) Stephen McDonnell et al.   ACS Nano

Ambipolar Phosphorene Field Effect Transistor

(2014) Saptarshi Das et al.   ACS Nano

Field-Effect Transistors Based on Few-Layered α-MoTe2

(2014) Nihar R. Pradhan et al.   ACS Nano

Chemical Vapor Deposition Growth of Crystalline Monolayer MoSe2

(2014) Xingli Wang et al.   ACS Nano

Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility

(2014) Han Liu et al.   ACS Nano

Ambipolar Molybdenum Diselenide Field-Effect Transistors: Field-Effect and Hall Mobilities

(2014) Nihar R. Pradhan et al.   ACS Nano

Back Gated Multilayer InSe Transistors with Enhanced Carrier Mobilities via the Suppression of Carrier Scattering from a Dielectric Interface

(2014) Wei Feng et al.   ADVANCED MATERIALS

Ambipolar MoTe2Transistors and Their Applications in Logic Circuits

(2014) Yen-Fu Lin et al.   ADVANCED MATERIALS

Plasmonic Hot Electron Induced Structural Phase Transition in a MoS2Monolayer

(2014) Yimin Kang et al.   ADVANCED MATERIALS

Schottky barrier heights for Au and Pd contacts to MoS2

(2014) Naveen Kaushik et al.   APPLIED PHYSICS LETTERS

Computational synthesis of single-layer GaN on refractory materials

(2014) Arunima K. Singh et al.   APPLIED PHYSICS LETTERS

High-performance MoS2 transistors with low-resistance molybdenum contacts

(2014) Jiahao Kang et al.   APPLIED PHYSICS LETTERS

Analysis of Charged State Stability for Monoclinic LiMnBO3 Cathode

(2014) Jae Chul Kim et al.   CHEMISTRY OF MATERIALS

Influence of strain and metal thickness on metal-MoS2 contacts

(2014) Wissam A. Saidi   JOURNAL OF CHEMICAL PHYSICS

Structures and Phase Transition of a MoS2 Monolayer

(2014) M. Kan et al.   Journal of Physical Chemistry C

Atomic Mechanism of Dynamic Electrochemical Lithiation Processes of MoS2 Nanosheets

(2014) Lifen Wang et al.   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

Air-Stable Surface Charge Transfer Doping of MoS2 by Benzyl Viologen

(2014) Daisuke Kiriya et al.   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

The Unusual Mechanism of Partial Fermi Level Pinning at Metal–MoS2 Interfaces

(2014) Cheng Gong et al.   NANO LETTERS

High Performance and Bendable Few-Layered InSe Photodetectors with Broad Spectral Response

(2014) Srinivasa Reddy Tamalampudi et al.   NANO LETTERS

Tunable Transport Gap in Phosphorene

(2014) Saptarshi Das et al.   NANO LETTERS

Electroluminescence and Photocurrent Generation from Atomically Sharp WSe2/MoS2 Heterojunction p–n Diodes

(2014) Rui Cheng et al.   NANO LETTERS

Strain-Engineering the Anisotropic Electrical Conductance of Few-Layer Black Phosphorus

(2014) Ruixiang Fei et al.   NANO LETTERS

Phosphorene excites materials scientists

(2014) Eugenie Samuel Reich   NATURE

Giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor

(2014) Miguel M. Ugeda et al.   NATURE MATERIALS

Phase-engineered low-resistance contacts for ultrathin MoS2 transistors

(2014) Rajesh Kappera et al.   NATURE MATERIALS

Atomically thin p–n junctions with van der Waals heterointerfaces

(2014) Chul-Ho Lee et al.   Nature Nanotechnology

Black phosphorus field-effect transistors

(2014) Likai Li et al.   Nature Nanotechnology

Dependence of the electronic and transport properties ofmetal-MoSe2interfaces on contact structures

(2014) Deniz Çakır et al.   PHYSICAL REVIEW B

Electrical contacts to monolayer black phosphorus: A first-principles investigation

(2014) Kui Gong et al.   PHYSICAL REVIEW B

Ab initiosynthesis of single-layer III-V materials

(2014) Arunima K. Singh et al.   PHYSICAL REVIEW B

Layer-controlled band gap and anisotropic excitons in few-layer black phosphorus

(2014) Vy Tran et al.   PHYSICAL REVIEW B

Phase Coexistence and Metal-Insulator Transition in Few-Layer Phosphorene: A Computational Study

(2014) Jie Guan et al.   PHYSICAL REVIEW LETTERS

Semiconducting Layered Blue Phosphorus: A Computational Study

(2014) Zhen Zhu et al.   PHYSICAL REVIEW LETTERS

Graphene Versus Ohmic Metal as Source-Drain Electrode for MoS2Nanosheet Transistor Channel

(2014) Young Tack Lee et al.   Small

Structural phase transitions in two-dimensional Mo- and W-dichalcogenide monolayers

(2014) Karel-Alexander N. Duerloo et al.   Nature Communications

High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus

(2014) Jingsi Qiao et al.   Nature Communications

Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics

(2014) Fengnian Xia et al.   Nature Communications

Quantum spin Hall insulators and quantum valley Hall insulators of BiX/SbX (X=H, F, Cl and Br) monolayers with a record bulk band gap

(2014) Zhigang Song et al.   NPG Asia Materials

Layer-dependent Band Alignment and Work Function of Few-Layer Phosphorene

(2014) Yongqing Cai et al.   Scientific Reports

Computational Study of Metal Contacts to Monolayer Transition-Metal Dichalcogenide Semiconductors

(2014) Jiahao Kang et al.   Physical Review X

Ultrahigh Photoresponse of Few-Layer TiS3Nanoribbon Transistors

(2014) Joshua O. Island et al.   Advanced Optical Materials

The physics and chemistry of the Schottky barrier height

(2014)   Applied Physics Reviews

Impact of Interlayer Processing Conditions on the Performance of GaN Light-Emitting Diode with Specific NiOx/Graphene Electrode

(2013) S. Chandramohan et al.   ACS Applied Materials & Interfaces

Metal Contacts on Physical Vapor Deposited Monolayer MoS2

(2013) Cheng Gong et al.   ACS Nano

Control of Radiation Damage in MoS2 by Graphene Encapsulation

(2013) Recep Zan et al.   ACS Nano

High-Performance Molybdenum Disulfide Field-Effect Transistors with Spin Tunnel Contacts

(2013) André Dankert et al.   ACS Nano

Tuning the Bandgap of Exfoliated InSe Nanosheets by Quantum Confinement

(2013) Garry W. Mudd et al.   ADVANCED MATERIALS

High mobility ambipolar MoS2 field-effect transistors: Substrate and dielectric effects

(2013) Wenzhong Bao et al.   APPLIED PHYSICS LETTERS

Band offsets and heterostructures of two-dimensional semiconductors

(2013) Jun Kang et al.   APPLIED PHYSICS LETTERS

Tuning the Electronic and Chemical Properties of Monolayer MoS2 Adsorbed on Transition Metal Substrates

(2013) Wei Chen et al.   NANO LETTERS

Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe2 Field Effect Transistors

(2013) Wei Liu et al.   NANO LETTERS

Intrinsic Electronic Transport Properties of High-Quality Monolayer and Bilayer MoS2

(2013) Britton W. H. Baugher et al.   NANO LETTERS

Zeeman-type spin splitting controlled by an electric field

(2013) Hongtao Yuan et al.   Nature Physics

Computational discovery of single-layer III-V materials

(2013) Houlong L. Zhuang et al.   PHYSICAL REVIEW B

One-Dimensional Electrical Contact to a Two-Dimensional Material

(2013) L. Wang et al.   SCIENCE

Hopping transport through defect-induced localized states in molybdenum disulphide

(2013) Hao Qiu et al.   Nature Communications

Electron-hole transport and photovoltaic effect in gated MoS2 Schottky junctions

(2013) Marcio Fontana et al.   Scientific Reports

Coherent Atomic and Electronic Heterostructures of Single-Layer MoS2

(2012) Goki Eda et al.   ACS Nano

Anisotropic Photoresponse Properties of Single Micrometer-Sized GeSe Nanosheet

(2012) Ding-Jiang Xue et al.   ADVANCED MATERIALS

Electrical characterization of back-gated bi-layer MoS2 field-effect transistors and the effect of ambient on their performances

(2012)   APPLIED PHYSICS LETTERS

Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers

(2012) Stefano Larentis et al.   APPLIED PHYSICS LETTERS

Transistors with chemically synthesized layered semiconductor WS2 exhibiting 105 room temperature modulation and ambipolar behavior

(2012) Wan Sik Hwang et al.   APPLIED PHYSICS LETTERS

Metal-to-Multilayer-Graphene Contact—Part I: Contact Resistance Modeling

(2012) Yasin Khatami et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Growth and characterization of large, high quality MoSe2 single crystals

(2012) Moussa Bougouma et al.   JOURNAL OF CRYSTAL GROWTH

Thermally Driven Crossover from Indirect toward Direct Bandgap in 2D Semiconductors: MoSe2 versus MoS2

(2012) Sefaattin Tongay et al.   NANO LETTERS

High-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts

(2012) Hui Fang et al.   NANO LETTERS

High Performance Multilayer MoS2 Transistors with Scandium Contacts

(2012) Saptarshi Das et al.   NANO LETTERS

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

(2012) Qing Hua Wang et al.   Nature Nanotechnology

Manipulation of Electronic Transport in the Bi(111) Surface State

(2012) G. Jnawali et al.   PHYSICAL REVIEW LETTERS

Spatial and Energy Distribution of Topological Edge States in Single Bi(111) Bilayer

(2012) Fang Yang et al.   PHYSICAL REVIEW LETTERS

Designing Electrical Contacts toMoS2Monolayers: A Computational Study

(2012) Igor Popov et al.   PHYSICAL REVIEW LETTERS

Coupled Spin and Valley Physics in Monolayers ofMoS2and Other Group-VI Dichalcogenides

(2012) Di Xiao et al.   PHYSICAL REVIEW LETTERS

High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals

(2012) Sunkook Kim et al.   Nature Communications

Tunable and sizable band gap in silicene by surface adsorption

(2012) Ruge Quhe et al.   Scientific Reports

Stretching and Breaking of Ultrathin MoS2

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