期刊
JOURNAL OF MATERIALS CHEMISTRY C
卷 6, 期 23, 页码 6153-6163出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c8tc01421c
关键词
-
资金
- National Natural Science Foundation of China [11274016/11474012/11674005/11274233/11664026]
- National Basic Research Program of China [2013CB932604/2012CB619304]
- Ministry of Science and Technology (National Materials Genome Project) of China [2016YFB0700600/2016YFA0301300]
Two-dimensional (2D) atomic crystals are promising channel materials for next generation electronics due to its outstanding gate electrostatics and few dangling bonds. Recently, tellurene, a new experimentally accessible Group-VI 2D tellurium, has drawn attention due to its large on/off ratios, high mobility and significant air stability. Herein, for the first time, we comprehensively examine the interfacial characteristics of monolayer (ML) tellurene field-effect transistors with a series of common bulk metals and 2D graphene as electrodes by using ab initio electronic structure calculations and quantum transport simulations. Furthermore, a lateral n-type Schottky contact is formed when contacting with Au in the a direction and Sc in both directions, while a lateral p-type Schottky contact is formed with Au in the b direction, and Cu, Ni, Ag, Pt, and Pd in both directions as a result of strong Fermi level pinning (FLP). The obtained FLP factor is 0.15 in the a direction and 0.09 in the b direction. Remarkably, a highly desirable lateral p-type Ohmic contact is formed with graphene in both directions. This investigation gives insight into the interfacial properties and guidance in electrode selection for ML tellurene devices.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据